Beam lead quartz chips for superconducting millimeter-wave circuits

Bass, R.; Zhang, Jian Z.; Bishop, W.L.; Lichtenberger, Arthur W.; Pan, S. K.

doi:10.1117/12.459183

Cited by 11 publications

(5 citation statements)

References 9 publications

(12 reference statements)

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“…Another material that has been popular as the membrane for a long time is Silicon-On-Insulator (SOI) wafers which have been employed for the fabrication of SIS and HEB mixers [92], [215][216][217][218]. In [92], [149], [215,216] the authors made use of gold beamleads providing grounding and positioning of the mixer. Alternatively, a bulk frame could be used to support the mixer [73], [210], [212] or a number of mixers [217].…”

Section: Membrane-based Heb Technologymentioning

confidence: 99%

See 1 more Smart Citation

Superconducting hot-electron bolometer: from the discovery of hot-electron phenomena to practical applications

Shurakov

Lobanov

Gol’tsman

2015

Supercond. Sci. Technol.

103

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The discovery of hot-electron phenomena in a thin superconducting film in the last century was followed by numerous experimental studies of its appearance in different materials aiming for a better understanding of the phenomena and consequent implementation of terahertz detection systems for practical applications. In contrast to the competitors such as superconductor-insulator-superconductor tunnel junctions and Schottky diodes, the hot electron bolometer (HEB) did not demonstrate any frequency limitation of the detection mechanism. The latter, in conjunction with a decent performance, rapidly made the HEB mixer the most attractive candidate for heterodyne observations at frequencies above 1 THz. The successful operation of practical instruments (the Heinrich Hertz Telescope, the Receiver Lab Telescope, APEX, SOFIA, Hershel) ensures the importance of the HEB technology despite the lack of rigorous theoretical routine for predicting the performance. In this review, we provide a summary of experimental and theoretical studies devoted to understanding the HEB physics, and an overview of various fabrication routes and materials.

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Section: Membrane-based Heb Technologymentioning

confidence: 99%

“…Yet another approach proposed in [219] uses quite a small membrane under each NbN bridge in a2×2 mixer array. Figures 20 and 21 represent examples of membrane-based waveguide mixers, reproduced from [216] and [217].…”

Section: Membrane-based Heb Technologymentioning

confidence: 99%

Superconducting hot-electron bolometer: from the discovery of hot-electron phenomena to practical applications

Shurakov

Lobanov

Gol’tsman

2015

Supercond. Sci. Technol.

103

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“…However, it is difficult to manipulate and to place such beams suspended inside the waveguide with high alignment precision. Typically beam leads [8] made of thick electro-plated gold are used for the electrical contacting, however, once the device is mounted it can neither be modified nor removed in a non-destructive matter. One possible approach to overcome the aforementioned issues is based on a Π-shaped Si support frame holder [9], which keeps a thin Si membrane hosting the active device suspended.…”

Section: Introductionmentioning

confidence: 99%

Suspended GaN beams and membranes on Si as a platform for waveguide-based THz applications

Krause

Desmaris

Pavolotsky

et al. 2018

J. Micromech. Microeng.

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Epitaxial growth of ultra-thin NbN films on AlxGa1-xN buffer-layers S Krause, D Meledin, V Desmaris et al. IntroductionThe exploration of the THz frequency range is constantly gaining speed and numerous applications have emerged within research, security, astronomy, biomedicine and metrology in recent years [1][2][3]. The main reason for this relatively late development can be attributed to several technological challenges that had to be overcome. As the dimensions of microwave components usually scale with the wavelength, their size presents a serious issue when the device operation frequency is approaching the THz range. This manifests itself in certain performance limitations due to parasitic capacitances, thermal issues, the excitation of unwanted electromagnetic (EM) modes or excessive RF losses in conductors as the skin depth may approach the roughness of the metal surface. Waveguides for guiding THz EM waves offer wideband operation and full confinement of the fields, yet they are also miniaturized and demand high surface quality and accuracy on the waveguide dimensions and alignment. Several different micro fabrication techniques [4] were developed for this purpose and are based on copper electroforming over a thick sacrificial photo resist mold [5,6] or deep Si etching processes [7]. In waveguidebased THz components, the actual substrate becomes more of a delicate membrane-like structure, which reduces the electrical loading of the waveguide and excludes substrate modes. However, it is difficult to manipulate and to place such beams suspended inside the waveguide with high alignment precision. Typically beam leads [8] made of thick electro-plated gold are used for the electrical contacting, however, once the device is mounted it can neither be modified nor removed in a non-destructive matter. One possible approach to overcome the aforementioned issues is based on a Π-shaped Si support frame holder [9], which keeps a thin Si membrane hosting the active device suspended. This concept has been successfully AbstractWe demonstrate the suitability of employing suspended GaN beams on a Π-shaped Si frame for waveguide-based cryogenic THz components and systems. This concept addresses major challenges and provides eased device handling, cryogenic operation, micron-alignment possibilities, high integratability and allows the electrical contacting by using bonding wires. In particular, a balanced hot electron bolometer (HEB) mixer was implemented for frequencies at 1.3 THz with state-of-the-art IF performance, which combines micro-machined all-metal waveguide components in conjunction with a suspended GaN beam. In addition, in order to accomplish a proper design of active or passive components, the accurate knowledge of the effective dielectric constant at THz frequencies is crucial when such membranes are employed. Thus, a direct measurement method based on a resonance structure and an S-parameter measurement between 1 THz and 1.5 THz is also presented.Keywords: THz components, GaN on Si, HEB, waveguide (Some f...

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“…The fabrication of low-loss, reliable RF MEMS switches on superconducting Nb transmission lines requires the integration of an already complex MEMS process [20] with Silicon-on-Insulator (SOI) technology [37]. This would ensure that our devices would be compatible with the 5 µm SOI substrates that NASA uses in their detectors [42] and the Al process was chosen so as to best reduce stress due to a CTE mis-match between the sacricial layer and the beam [43].…”

Section: Phase Switch Fabricationmentioning

confidence: 99%

RF MEMS for Cryogenic Applications

Bruno

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RF MEMS (Radio Frequency Microelectromechanical Systems) has been a rapidly expanding eld for the last decade. This expansion is driven by the need for low power, high linearity and high performance devices for wireless, defense, and scientic applications. NASA has a vested interest in RF MEMS switches for signal routing and phase modulation in their next generation of Cosmic Microwave Background (CMB) measurements. Recently detected anisotropies in the polarization of the CMB by the BICEP2 detector have provided insight to the structure and energy of the inationary period right after the Big Bang and NASA looks to expand on that success with the Beyond Einstein Ination Probe which will map the polarization of CMB over the entire sky. This work investigates the fabrication and reliability of RF MEMS devices as possible candidates for phase modulators operating on a satellite platform for CMB measurements at temperatures close to absolute zero. RF MEMS DC-contact series switches have been implemented from DC − 30 GHz on superconducting Nb microstrip on 5 µm silicon-on-insulator (SOI) substrates. The devices were built using a novel fabrication process that uses the device layer of the SOI as the microstrip dielectric. Tunable resonators (f c = 16 GHz) have been designed and fabricated using the RF MEMS switches to tune f c in 1 GHz steps. RF performance of the switches and resonators are presented.The contact resistance (R C ) when the switch is closed is also of interest because variations in R C could introduce errors into CMB measurements. A closed-cycle cryostat has been modied to measure shifts in R C as the devices are actuated. Reliability testing of the devices at 4 K show that the devices are currently unreliable for long term operation at cryogenic temperatures, with device lifetimes less that one million contacts. Device failure is in the form of stiction, or a permanently closed switch that will no longer actuate. Charging of the substrate underneath the MEMS switch has been determined as the main cause of stiction at 4 K. Results and possible solutions to prolong operation lifetime are discussed.

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Beam lead quartz chips for superconducting millimeter-wave circuits

Cited by 11 publications

References 9 publications

Superconducting hot-electron bolometer: from the discovery of hot-electron phenomena to practical applications

Superconducting hot-electron bolometer: from the discovery of hot-electron phenomena to practical applications

Suspended GaN beams and membranes on Si as a platform for waveguide-based THz applications

RF MEMS for Cryogenic Applications

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