Be-doped low-temperature-grown GaAs material for optoelectronic switches

Krotkus, A.; Bertulis, K.; Kamińska, M.; Korona, K. P.; Wołoś, Agnieszka; Siegert, J.; Marcinkevičius, Saulius; Roux, J.-F.; Coutaz, Jean‐Louis

doi:10.1049/ip-opt:20020435

Cited by 35 publications

(31 citation statements)

References 13 publications

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“…3 [8]). Annealing reduces the number of As Ga , leading to a decrease of the hopping conductivy that is dominating electrical transport in as-grown LTG GaAs samples.…”

Section: Growth and Structural Characterization Of Be-doped Ltg Gaasmentioning

confidence: 99%

“…The structure of the LTG GaAs layers was studied by cross-sectional transmission electron microscopy (XTEM) on several as-grown and annealed samples [8]. As-grown layers with N Be = 1.5·10 18 cm −3 were of high crystalline quality up to a thickness of about 3 µm.…”

Section: Growth and Structural Characterization Of Be-doped Ltg Gaasmentioning

confidence: 99%

“…In the case of DT, 800 nm pulses were used for carrier excitation, whereas 1450 nm wavelength pulses were used for probing the dynamics of electron trap population. Figure 4 illustrates transients measured by three different techniques on LTG GaAs layer grown at 250 • C and annealed at 650 • C [8,13]. The characteristic decay time of the PL and TR transients as well as the rise time of DT transient are of the order of 500 fs and are interpreted as the electron capture time.…”

Section: Carrier Dynamics In Ltg Gaasmentioning

confidence: 99%

“…were evaluated in [8]. In formula (1) τ n and τ p are the electron and hole trapping times, σ n and σ p are their capture cross-sections, N n and N p are their densities, and ν n and ν p are their thermal velocities, respectively.…”

Section: Carrier Dynamics In Ltg Gaasmentioning

confidence: 99%

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Semiconductor materials for ultrafast optoelectronic applications

Krotkus¹,

Bertulis²,

Adomavičius³

et al. 2009

Lithuanian J. Phys.

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The paper presents a review of experimental investigations of various semiconductor materials used for the development of ultrafast optoelectronic devices activated by femtosecond laser pulses that have been performed at the Optoelectronics Laboratory of the Semiconductor Physics Institute during the period from 1997 to 2008. Technology and physical characteristics of low-temperature-grown GaAs and GaBiAs layers as well as the effect of terahertz radiation from the femtosecond laser excited semiconductor surfaces are described and analysed.

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“…3 [8]). Annealing reduces the number of As Ga , leading to a decrease of the hopping conductivy that is dominating electrical transport in as-grown LTG GaAs samples.…”

Section: Growth and Structural Characterization Of Be-doped Ltg Gaasmentioning

confidence: 99%

Section: Growth and Structural Characterization Of Be-doped Ltg Gaasmentioning

confidence: 99%

Section: Carrier Dynamics In Ltg Gaasmentioning

confidence: 99%

Section: Carrier Dynamics In Ltg Gaasmentioning

confidence: 99%

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Semiconductor materials for ultrafast optoelectronic applications

Krotkus¹,

Bertulis²,

Adomavičius³

et al. 2009

Lithuanian J. Phys.

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“…Because the total number of the As Ga defects is much larger than that of the main compensating acceptor -V Ga , only a few percent of the Asantisites are ionised and can participate in the electron trapping. Neutral As Ga centres can be activated by doping with acceptor impurities, c.a., Be or C [75], for a fine adjustment of the free electron lifetime [69,76].…”

Section: Electron Trapping Timesmentioning

confidence: 99%

Semiconductors for terahertz photonics applications

Krotkus¹

2010

J. Phys. D: Appl. Phys.

109

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Abstract:Generation and measurement of ultrashort, sub-picosecond pulses of electromagnetic radiation with their characteristic Fourier spectra that reach far into terahertz (THz) frequency range has recently become a versatile tool of the far-infrared spectroscopy and imaging. This technique -THz time-domain spectroscopy, in addition to a femtosecond pulse laser, requires semiconductor components manufactured from materials with a short photoexcited carrier lifetime, high carrier mobility, and large dark resistivity. Here we will review most important developments in the field of investigation of such materials. Main characteristics of low-temperature-grown or ion-implanted GaAs and semiconducting compounds sensitive in the wavelength ranges around 1 µm and 1.5 µm will be surveyed. The second part of the paper is devoted to the effect of surface emission of THz transients from semiconductors illuminated by femtosecond laser pulses. Main physical mechanisms leading to this emission as well as their manifestation in various crystals will be described.

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Quantum dot materials for terahertz generation applications

Leyman

Gorodetsky

Bazieva

et al. 2016

Laser & Photonics Reviews

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Compact and tunable semiconductor terahertz sources providing direct electrical control, efficient operation at room temperatures and device integration opportunities are of great interest at the present time. One of the most well-established techniques for terahertz generation utilises photoconductive antennas driven by ultrafast pulsed or dualwavelength continuous wave laser systems, though some limitations, such as confined optical wavelength pumping range and thermal breakdown, still exist. The use of quantum dotbased semiconductor materials, having unique carrier dynamics and material properties, can help to overcome limitations and enable efficient optical-to-terahertz signal conversion at room temperatures. Here we discuss the construction of novel and versatile terahertz transceiver systems based on quantum dot semiconductor devices. Configurable, energy-dependent optical and electronic characteristics of quantum-dot-based semiconductors are described, and the resonant response to optical pump wavelength is revealed. Terahertz signal generation and detection at energies that resonantly excite only the implanted quantum dots opens the potential for using compact quantum dot-based semiconductor lasers as pump sources. Proof-ofconcept experiments are demonstrated here that show quantum dot-based samples to have higher optical pump damage thresholds and reduced carrier lifetime with increasing pump power.

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Be-doped low-temperature-grown GaAs material for optoelectronic switches

Cited by 35 publications

References 13 publications

Semiconductor materials for ultrafast optoelectronic applications

Semiconductor materials for ultrafast optoelectronic applications

Semiconductors for terahertz photonics applications

Quantum dot materials for terahertz generation applications

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