Abstract:Spins in gated semiconductor quantum dots (QDs) are a promising platform for Hubbard model simulation inaccessible to computation. Precise control of the tunnel couplings by tuning voltages on metallic gates is vital for a successful QD-based simulator. However, the number of tunable voltages and the complexity of the relationships between gate voltages and the parameters of the resulting Hubbard models quickly increase with the number of quantum dots. As a consequence, it is not known if and how a particular … Show more
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