BAW Resonator as Elastic Characterization Tools of WO3 Thin Films

Arab, Madjid; Dirany, Nadine; David, M.

doi:10.1016/j.matpr.2016.01.047

Cited by 3 publications

(4 citation statements)

References 15 publications

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“…In addition, the viscoelastic losses of the overlay were also adjusted according to the experimental observations, resulting in an equivalent mechanical quality factor of 50. obtained with bulk acoustic wave (BAW) resonator. SAW results are slightly lower but remain of the same order of magnitude as those obtained using BAW [23]. This agreement shows that our approach remains reliable for the evaluation of elastic constants.…”

Section: Elastic Properties Of Wo3 Thin Filmssupporting

confidence: 77%

“…To simulate our piezoelectric resonators, we have built a model that takes into account each material constituting the SAW devices. This approach is similar to the one conducted with volume wave acoustic resonators [23]. Each element can be considered as points of a given structure for which the physical parameters will be computed using the finite element method coupled with that of boundary elements.…”

Section: Simulationmentioning

confidence: 99%

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Investigation of Elastic Properties of WO3 Thin Films Supported on Quartz in SAW Sensing Devices

Arab¹,

Madigou²,

Chevallier³

et al. 2022

Preprint

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This study aimed to discuss the combined theoretical and experimental results of elastic properties of the tungsten trioxide films supported on Quartz (YX)/45°/10° resonator, as surface acoustic wave (SAW) device. The SAW system with different thicknesses of WO3 thin films were imaged and structurally characterized by X-Ray diffraction, atomic force and transmission electron microscopy. The deposited WO3 films (100 nm, 200 nm and 300 nm) were crystallized in a single monoclinic phase. The acoustoelectric properties of the SAW system were obtained by combining theoretical simulations with experimental measurements. The modeling of the SAW devices has been performed by the finite element and boundary element methods (FEM/BEM). The theoretical and experimental electrical admittances responses obtained at room temperature gave access to elastic constants. The gravimetric effect of the deposited layers is observed by a resonance frequencies shift to lower values with thicknesses film. Moreover, the acoustic losses are affected by the dielectric losses of the WO3 films, while the resonant frequency decreases almost linearly. SAW devices revealed strong displacement fields with low acoustic losses as a function of WO3 thicknesses. For all the deposited layers, the Young's modulus and the Poisson coefficient obtained are respectively of 8 GPa and 0.5.

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Section: Elastic Properties Of Wo3 Thin Filmssupporting

confidence: 77%

Section: Simulationmentioning

confidence: 99%

Investigation of Elastic Properties of WO3 Thin Films Supported on Quartz in SAW Sensing Devices

Arab¹,

Madigou²,

Chevallier³

et al. 2022

Preprint

View full text Add to dashboard Cite

show abstract

“…The obtained results with SAW resonator, show similar elastic characteristic than those obtained with bulk acoustic wave (BAW) resonator. SAW results are slightly lower but remain of the same order of magnitude as those obtained using BAW [23]. This agreement shows that our approach remains reliable for the evaluation of elastic constants.…”

Section: Elastic Properties Of Wo 3 Thin Filmssupporting

confidence: 77%

“…To simulate our piezoelectric resonators, we built a model that takes into account each material constituting the SAW devices. This approach is similar to the one used for volume wave acoustic resonators [23]. Each element can be considered as points of a given structure for which the physical parameters will be computed using the finite element method coupled with the boundary element method.…”

Section: Simulationmentioning

confidence: 99%

Investigation of Elastic Properties of WO3 Thin Films Supported on Quartz in Surface Acoustic Wave Sensing Devices

Arab

Madigou

Chevallier

et al. 2022

Electronic Materials

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This study aims to discuss the combined theoretical and experimental results of elastic properties of tungsten trioxide films supported on Quartz (YX)/45°/10° resonator to form surface acoustic wave (SAW) devices. The SAW systems with different thicknesses of WO3 thin films were imaged and structurally characterized by X-ray diffraction, atomic force, and transmission electron microscopy. The deposited WO3 films (100, 200, and 300 nm of thickness) crystallized in a single monoclinic phase. The acoustoelectric properties of the SAW system were obtained by combining theoretical simulations with experimental measurements. The modeling of the SAW devices has been performed by the finite element and boundary element methods (FEM/BEM). The elastic constants of the films at room temperature were assessed via electrical admittances experiments in light of theoretical calculations. The gravimetric effect of the deposited layers is observed by a shift of the resonance frequency to lower values as the thickness of the films increases. Moreover, the acoustic losses are affected by the dielectric losses of the WO3 films while the resonant frequency decreases almost linearly. SAW devices revealed strong displacement fields with low acoustic losses as a function of WO3 thicknesses. For all the deposited layers, the measured Young’s moduli and Poisson’s ratios are 8 GPa and 0.5, respectively.

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Modification of SiO2, ZnO, Fe2O3 and TiN Films by Electronic Excitation under High Energy Ion Impact

Matsunami

Sataka

Okayasu

et al. 2021

QuBS

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It has been known that the modification of non-metallic solid materials (oxides, nitrides, etc.), e.g., the formation of tracks, sputtering representing atomic displacement near the surface and lattice disordering are induced by electronic excitation under high-energy ion impact. We have investigated lattice disordering by the X-ray diffraction (XRD) of SiO2, ZnO, Fe2O3 and TiN films and have also measured the sputtering yields of TiN for a comparison of lattice disordering with sputtering. We find that both the degradation of the XRD intensity per unit ion fluence and the sputtering yields follow the power-law of the electronic stopping power and that these exponents are larger than unity. The exponents for the XRD degradation and sputtering are found to be comparable. These results imply that similar mechanisms are responsible for the lattice disordering and electronic sputtering. A mechanism of electron–lattice coupling, i.e., the energy transfer from the electronic system into the lattice, is discussed based on a crude estimation of atomic displacement due to Coulomb repulsion during the short neutralization time (~fs) in the ionized region. The bandgap scheme or exciton model is examined.

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BAW Resonator as Elastic Characterization Tools of WO3 Thin Films

Cited by 3 publications

References 15 publications

Investigation of Elastic Properties of WO3 Thin Films Supported on Quartz in SAW Sensing Devices

Investigation of Elastic Properties of WO3 Thin Films Supported on Quartz in SAW Sensing Devices

Investigation of Elastic Properties of WO3 Thin Films Supported on Quartz in Surface Acoustic Wave Sensing Devices

Modification of SiO2, ZnO, Fe2O3 and TiN Films by Electronic Excitation under High Energy Ion Impact

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