2023
DOI: 10.1016/j.matpr.2023.01.410
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BaTiO3 perovskite for optoelectronics application: A DFT study

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Cited by 4 publications
(2 citation statements)
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“…Therefore, we expect a larger experimental band gap for the doped h-BN. The resulting band gaps of doped h-BN are larger than the band gaps (0.5–1 eV) of ABC hexagonal hyper ferroelectric or the band gap of 2D ferroelectric In 2 Se 3 layer (0.78 eV by GGA-PBE) and are comparable to that of BaTiO 3 (1.56 eV obtained by GGA-PBE) . Here, it is worth mentioning that reduction of the band gap might cause leakage current during ferroelectric switching.…”
Section: Methodsmentioning
confidence: 73%
See 1 more Smart Citation
“…Therefore, we expect a larger experimental band gap for the doped h-BN. The resulting band gaps of doped h-BN are larger than the band gaps (0.5–1 eV) of ABC hexagonal hyper ferroelectric or the band gap of 2D ferroelectric In 2 Se 3 layer (0.78 eV by GGA-PBE) and are comparable to that of BaTiO 3 (1.56 eV obtained by GGA-PBE) . Here, it is worth mentioning that reduction of the band gap might cause leakage current during ferroelectric switching.…”
Section: Methodsmentioning
confidence: 73%
“…The resulting band gaps of doped h-BN are larger than the band gaps (0.5–1 eV) of ABC hexagonal hyper ferroelectric 28 or the band gap of 2D ferroelectric In 2 Se 3 layer (0.78 eV by GGA-PBE) 29 and are comparable to that of BaTiO 3 (1.56 eV obtained by GGA-PBE). 30 Here, it is worth mentioning that reduction of the band gap might cause leakage current during ferroelectric switching. However, leakage current is a common challenge for ferroelectric materials, for example, a large leakage current is observed in ferroelectric Sc-doped w-AlN.…”
Section: Methodsmentioning
confidence: 99%