BaTiO3 devices doped with Zr using mechanical alloying

Dielectric properties, microstructure and diffuse transition of Ni-doped Ba(Zr0.2Ti0.8)O3 ceramics

“…In recent years, most studies are focused on the temperature dependence of the dielectric properties, optical, relaxor behavior and domain structure of BZT materials [9][10][11][12][13][14][15][16][17][18][19][20]. The effect of doping on microstructure and dielectric properties of BZT materials has been extensively studied to further improve their performance [21][22][23][24][25][26][27][28][29][30][31].…”

High piezoelectric actuation response in graded Nd2O3 and ZrO2 doped BaTiO3 structures

“…The possibility of both A and B substitutions makes Nd doped BT an interesting material and promising dielectric properties have been noted [20][21][22][23]. Doping of the BT with ZrO 2 is known to modulate the microstructure, as well as the dielectric and electromechanical properties [24][25][26][27]. Generally, ZrO 2 segregates to the grain boundaries forming core-shell structures with BT cores and BaTi 1-x Zr x O 3 shells, where Ti is partially replaced by Zr [24][25][26].…”

“…Doping of the BT with ZrO 2 is known to modulate the microstructure, as well as the dielectric and electromechanical properties [24][25][26][27]. Generally, ZrO 2 segregates to the grain boundaries forming core-shell structures with BT cores and BaTi 1-x Zr x O 3 shells, where Ti is partially replaced by Zr [24][25][26]. When BT is doped individually with Nd and Zr at varying concentrations, significant changes in field induced strain beyond that of BT was not observed at 10-15 kV/cm.…”

Microstructural and Dielectric Properties of Zr Doped Microwave SinteredCaCu3Ti4Jesurani1, Kanagesan2, Hashim3 et al. 2014Advances in Materials Science and Engineering4040View full textAdd to dashboardCite

“…Choudhury et al [34] have reported that the dielectric constant of Zr doped BaTiO 3 samples sintered at 1250 ∘ C showed a maximum value of about 1000 for 100 kHz frequency. Gómez-Yáñez et al [35] reported that the dielectric constant and dielectric loss are 576 and 0.33, respectively. When Zr doped BaTiO 3 is synthesized by mechanical alloying [35], its dielectric constant and dielectric loss are 539 and 0.035, respectively.…”

“…Gómez-Yáñez et al [35] reported that the dielectric constant and dielectric loss are 576 and 0.33, respectively. When Zr doped BaTiO 3 is synthesized by mechanical alloying [35], its dielectric constant and dielectric loss are 539 and 0.035, respectively. When the sample is sintered in the range of 1200-1400 ∘ C, as in the present investigation, a higher dielectric constant (6020) is obtained accompanied by low dielectric loss (0.52).…”