2013
DOI: 10.1088/0022-3727/46/7/074001
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Basic principles of STT-MRAM cell operation in memory arrays

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Cited by 464 publications
(348 citation statements)
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“…Prominent examples for such devices are spin-transfer torque magnetic random-access memories (STT MRAM) [1,2,3] and spin-torque oscillators (STO) that serve as field generators for microwave assisted recording of hard-disk drives [4,5].…”
Section: Introductionmentioning
confidence: 99%
“…Prominent examples for such devices are spin-transfer torque magnetic random-access memories (STT MRAM) [1,2,3] and spin-torque oscillators (STO) that serve as field generators for microwave assisted recording of hard-disk drives [4,5].…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3] Traditionally, these systems have been formed by in-plane (IP) materials with the anisotropy arising from the shape of patterned structures. 2 Aiming to move towards higher densities, IP materials are being substituted by films with high perpendicular magnetic anisotropy (PMA), which have high thermal stability and sharp magnetic switching.…”
mentioning
confidence: 99%
“…[1][2][3] Traditionally, these systems have been formed by in-plane (IP) materials with the anisotropy arising from the shape of patterned structures. 2 Aiming to move towards higher densities, IP materials are being substituted by films with high perpendicular magnetic anisotropy (PMA), which have high thermal stability and sharp magnetic switching. [2][3][4] Recently, in order to reduce the critical current density of spin-transfer-torque MRAM, alternative magnetic systems which combine IP and PMA materials have been proposed.…”
mentioning
confidence: 99%
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