Basic Nonlinear Analysis of Class-S Power Amplifiers based on GaN Switching Transistors

Samulak, Andrzej; Fischer, Georg; Weigel, Robert

doi:10.1109/gemic.2009.4815900

Cited by 9 publications

(7 citation statements)

References 4 publications

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“…It has been successfully employed to probe protein complex stability in the gas phase. [28][29][30] However, the underlying multiple collision, slow energy deposition mechanism frequently results in structural rearrangements prior to complex dissociation, generating highly charged, unfolded monomer and complementary (n-1)mer. 31,32 In contrast, surfaceinduced dissociation (SID), in which ions experience a single fast collision with a solid surface, shows promise as a structural probing method presumably due to the rapid, highenergy transfer step, which prevents significant structural rearrangement prior to complex dissociation.…”

mentioning

confidence: 99%

Localization of Protein Complex Bound Ligands by Surface-Induced Dissociation High-Resolution Mass Spectrometry

Büsch

VanAernum

et al. 2018

Anal. Chem.

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Surface-induced dissociation (SID) is a powerful means of deciphering protein complex quaternary structures due to its capability of yielding dissociation products that reflect the native structures of protein complexes in solution. Here we explore the suitability of SID to locate the ligand binding sites in protein complexes. We studied C-reactive protein (CRP) pentamer, which contains a ligand binding site within each subunit, and cholera toxin B (CTB) pentamer, which contains a ligand binding site between each adjacent subunit. SID dissects ligand-bound CRP into subcomplexes with each subunit carrying predominantly one ligand. In contrast, SID of ligandbound CTB results in the generation of subcomplexes with a ligand distribution reflective of two subunits contributing to each ligand binding site. SID thus has potential application in localizing sites of small ligand binding for multisubunit protein-ligand complexes.

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mentioning

confidence: 99%

Localization of Protein Complex Bound Ligands by Surface-Induced Dissociation High-Resolution Mass Spectrometry

Büsch

VanAernum

et al. 2018

Anal. Chem.

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“…For a CCDF of 10 −6 a 3-level version of the modulator in [9] has a non-null sequence up to a length of 18 cycles. However, for long sequences transistors of the switching mode PA will operate in the third quadrant of the I-V diagram which is a particular problem with high power GaN output stages [10]. Therefore, modulators with highpass character [11] are inherently better suited for class-S systems.…”

Section: B Comb Modulator With DC Notchmentioning

confidence: 99%

Class-S power amplifier concept for mobile communications in rural areas with concurrent transmission at 450 MHz and 900 MHz

Schmidt

Digel

Berroth

2011

2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS 2011)

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An 15th order bandpass delta-sigma modulator for class-S power amplifiers is presented. The modulator is based on a third order low pass prototype which is designed to meet the requirements for signal-to-noise ratio (SNR) of major mobile communication standards in a bandwidth of around 30 MHz.The transform z −1 → z −5 leads to a repetition of the low pass notch in the noise transfer function (NTF) at frequencies f = n/5fs, n = 1, 2, 3, 4, 5, . . . . Apart from sinc filtering due to rectangular output pulses the NTF shape is equal in all frequency bands. The two lower frequency bands at f = 1/5fs, 2/5fs are independent from each other and can be used for concurrent transmission in the 450 MHz and 900 MHz band.The paper investigates the modulator with respect to the signal to noise ratio, the stability and the coding efficiency versus input amplitudes of tones in both frequency bands.

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“…In recent years, the class‐S amplifier, an advanced concept of a switch‐mode amplifier in the microwave frequency range, is a popular system [3, 4]. This system consists of a delta‐sigma modulator (DSM), switch‐mode PA, filter and balun.…”

Section: Introductionmentioning

confidence: 99%

GaN HEMT based high‐efficiency current‐mode class‐D amplifier using chip‐on‐board technique

Park

Yoo

Kang

et al. 2011

Micro & Optical Tech Letters

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This article presents a high efficiency current-mode class-D (CMCD) amplifier using a GaN high electron mobility transistor (HEMT) for class-S system-a digitally controlled by deltasigma modulation. To enhance a drain efficiency of CMCD amplifier, the chip-on-board (COB) technique, which can reduce the external parasitic components of the packaged transistor and allow fast switching operation at high frequencies by minimizing distortion of the pulse waveform, is adopted. A LC-resonance circuit with adequate Q values between each transistor and output matching network controls harmonic signal by using the lumped elements to extract pure fundamental frequency of the output signal. For a high efficiency pushpull operation of CMCD amplifier, low-loss rat-race baluns are integrated at input and output circuits. From the measured results for a continuous wave of 3.35 GHz, the CMCD amplifier using COB technique shows a maximum output power of 35.88 dBm and a maximum power gain of about 10 dB. Also, the proposed CMCD amplifier provides a high power-added-efficiency (PAE) of 63.1% and a drain efficiency of 76.3% at maximum output power. The drain efficiency is still remained over 70% in the frequency range of 200 MHz.

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Basic Nonlinear Analysis of Class-S Power Amplifiers based on GaN Switching Transistors

Cited by 9 publications

References 4 publications

Localization of Protein Complex Bound Ligands by Surface-Induced Dissociation High-Resolution Mass Spectrometry

Localization of Protein Complex Bound Ligands by Surface-Induced Dissociation High-Resolution Mass Spectrometry

Class-S power amplifier concept for mobile communications in rural areas with concurrent transmission at 450 MHz and 900 MHz

GaN HEMT based high‐efficiency current‐mode class‐D amplifier using chip‐on‐board technique

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