Basic Achievements and Problems in Research on the Interaction of Atomic Particles with the Surfaces of Solids

Arifov, U.A.

doi:10.1070/pu1972v014n06abeh004778

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“…In the as-irradiated sample, ave = 293 ps is clearly above the bulk lifetime, proving that vacancy defects are present in the samples after the neutron irradiation. It can be noted that this is approximately 10 ps less than in the studies by Arifov and Arutyunov, 18 who used a 100 times larger neutron fluence. In the annealing at 473 K, the average positron lifetime increases to 345 ps.…”

Section: Resultsmentioning

confidence: 67%

“…Among the first annealing studies on ͑neutron͒ irradiated Ge were Yeh et al 17 and Arifov and Arutyunov. 18 It seems that the as-grown samples used in both studies contain native defects, since the average lifetime calculated from the reported annihilation rates ͑ = 4.17ϫ 10 9 s −1 ͒ is around 240 ps, i.e., approximately 15-20 ps above the bulk lifetime in Refs. 14 17,18 report that the annealing of the irradiation-induced defects is divided into two steps.…”

Section: Introductionmentioning

confidence: 99%

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Divacancy clustering in neutron-irradiated and annealedn-type germanium

et al. 2008

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We have studied the annealing of vacancy defects in neutron-irradiated germanium. After irradiation, the Sb-doped samples ͓͑Sb͒ = 1.5ϫ 10 15 cm −3 ͔ were annealed at 473, 673, and 773 K for 30 min. The positron lifetime was measured as a function of temperature ͑30-295 K͒. A lifetime component of 330 ps with no temperature dependence is observed in as-irradiated samples, identified as the positron lifetime in a neutral divacancy and indicating that the divacancy is stable at room temperature ͑RT͒. Annealing at 673 K resulted in an increase in the average positron lifetime, and in addition, the annealed samples further showed a larger lifetime component of 430 ps at RT, which is due to larger vacancy clusters. The average positron lifetime in the samples annealed at 473 K has a definite temperature dependence, suggesting that the divacancies become negative as the crystal recovers and the Fermi level moves upwards in the band gap. Annealing at 673 K, reduces the average lifetime and intensity of the defect component 2 at RT, indicating that the vacancy clusters have started to anneal. Negative divacancies are still present in the samples after this anneal. Annealing at 773 K is enough to remove all observable vacancy defects.

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Section: Resultsmentioning

confidence: 67%