Abstract:The current gain and cut-off frequency performance in NPN Si/SiGe/Si Double-Heterojunction Bipolar Transistors (SiGe DHBTs) with two different base doping profiles (NB) has been analyzed. The simulation results for conventional uniform-NB SiGe DHBT are compared with the proposed SiGe Drift-DHBT (DrDHBT) having Nrramp, while base Gummel number is kept constant in both the devices. The NB ramp is controlled such that it minimizes the decelerating fileld component and a net accelerating field in quasi-neutral bas… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.