Barrier reduction and current transport mechanism in Pt/n-InP Schottky diodes using atomic layer deposited ZnO interlayer

Abstract

Modification of interface properties in Pt/n-InP Schottky contacts with atomic layer deposited ZnO interlayer (IL) (5 and 10 nm) has been carried out and the electrical properties were investigated using current-voltage (I-V) and capacitance-voltage (C-V) techniques. The insertion of ZnO IL in the Pt/n-InP interface reduced the effective barrier height. The barrier heights from C-V method were higher with respect to those from I-V method. The interface state density for 5 nm thick ZnO was higher than that for 10 nm thick ZnO. The barrier heights according to thermionic field emission model showed much closer to those from C-V method. Surface passivation and interfacial dipole were suggested to modulate the Schottky barrier at the Pt/ZnO/n-InP interface.

Schottky Contacts to ZnO-Nanocoated SnSe Powders by Atomic Layer Deposition

“…An approximately 7 nm thick HfO 2 film deposited by ALD on native oxide-covered InGaAs was found to exhibit a similar effect . A lower density of interface states was observed for the ZnO (10 nm)/InP junction as compared to the ZnO (5 nm)/InP junction . We believe that the defective interfacial layer that remained in the SnSe sample with ZnO 10 cycles might reduce the hole concentration and conductivity.…”

“…35 A lower density of interface states was observed for the ZnO (10 nm)/InP junction as compared to the ZnO (5 nm)/ InP junction. 36 We believe that the defective interfacial layer that remained in the SnSe sample with ZnO 10 cycles might reduce the hole concentration and conductivity. For the SnSe sample with 40 cycles, this defective layer might have been removed by the self-cleaning effect, which increased the hole concentration again, as presented in Table 1.…”