Barrier properties of plastic films coated with an Al2O3 layer by roll-to-toll atomic layer deposition

Hirvikorpi, Terhi; Laine, Risto; Vähä-Nissi, Mika; Kilpi, Väinö; Salo, Erkki; Liu, Weimin; Lindfors, Sven; Vartiainen, Jari; Kenttä, Eija; Nikkola, Juha; Harlin, Ali; Kostamo, Juhana

doi:10.1016/j.tsf.2013.10.148

Cited by 49 publications

(38 citation statements)

References 28 publications

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“…The ALD Al 2 O 3 T-FTIR spectrum (Fig. 1a) shows only a broad absorption band centered at ∼755 cm -1 that is similar in appearance to other reported FTIR spectra for Al 2 O 3 films deposited by ALD [162][163][164] and PECVD [165][166][167] methods. The broad nature of the absorption band shown in Fig.…”

Section: Elemental Composition-supporting

confidence: 84%

“…1a is generally attributed to unresolved Al-O-Al bending (650-700 cm -1 ) and Al-O stretching (750-850 cm -1 ) bands. [162][163][164][165][166][167] Alternatively, the Al 2 O 3 FTIR absorption band in this range can be interpreted in terms of the Al coordination where the stretching modes for AlO 6 octahedra are expected at 500-750 cm -1 whereas the stretching modes for AlO 4 tetrahedra are expected at 750-850 cm -1 . 154,155 From this perspective, the broad nature for the Al-O absorption band in Fig.…”

Section: Elemental Composition-mentioning

confidence: 98%

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Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Gaskins

Hopkins

Merrill

et al. 2017

ECS J. Solid State Sci. Technol.

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Atomic layer deposited (ALD) high-dielectric-constant (high-k) materials have found extensive applications in a variety of electronic, optical, optoelectronic, and photovoltaic devices. While electrical, optical, and interfacial properties have been the primary consideration for such devices, thermal and mechanical properties are becoming an additional key consideration for many new and emerging applications of ALD high-k materials in electromechanical, energy storage, and organic light emitting diode devices. Unfortunately, a clear correspondence between thermal/mechanical and electrical/optical properties in ALD high-k materials has yet to be established, and a detailed comparison to conventional silicon-based dielectrics to facilitate optimal material selection is also lacking. In this regard, we have conducted a comprehensive investigation and review of the thermal, mechanical, electrical, optical, and structural properties for a series of prevalent and emerging ALD high-k materials including aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), hafnium oxide (HfO 2 ), and beryllium oxide (BeO). For comparison, more established silicon-based dielectrics were also examined, including thermally grown silicon dioxide (SiO 2 ) and plasma-enhanced chemically vapor deposited hydrogenated silicon nitride (SiN:H). We find that in addition to exhibiting high values of dielectric permittivity and electrical resistance that exceed those of SiO 2 and SiN:H, the ALD high-k materials exhibit equally exceptional thermal and mechanical properties with coefficients of thermal expansion ≤ 6 × 10 -6 / • C, thermal conductivites (κ) of 3-15 W/m K, and Young's modulus and hardness values exceeding 200 and 25 GPa, respectively. In many cases, the observed extreme thermal/mechanical properties correlate with the presence of crystallinity in the ALD high-k films. In contrast, some of the electrical and optical properties correlate more strongly with the percentage of ionic vs. covalent bonds present in the high-k film. Overall, the ALD high-k dielectrics investigated concurrently exhibit compelling thermal/mechanical and electrical/optical properties. The drive to reduce gate leakage currents in highly scaled complementary metal-oxide-semiconductor (CMOS) transistors has led to the exploration and development of a wide variety of high-dielectricconstant (high-k) materials to replace silicon dioxide (SiO 2 ) as the insulating gate dielectric material.1-8 Many of these same high-k materials have found additional applications in future non-CMOS logic and memory storage products such as solid-state electrolytes in resistive switching devices, 9,10 tunnel barriers in spin-transport devices, 11 and as a ferroelectric in magnetoelectric devices. While electrical, physical, and thermodynamic properties have clearly been a key consideration in all of the above applications, thermal properties have become an additional important consideration for higk-k dielectrics as aggressive dimensional scaling of devices has created the need to dissipate ...

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Section: Elemental Composition-supporting

confidence: 84%

Section: Elemental Composition-mentioning

confidence: 98%

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Gaskins

Hopkins

Merrill

et al. 2017

ECS J. Solid State Sci. Technol.

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“…Studies have shown that ALD coatings are perfectly suited to produce high performance permeation barriers on polymeric and porous materials, such as poly (2, 6-ethylenenaphthalate), polylactide (PLA), polyimide, polyethylene films, coated boards, and etc. 14,[17][18][19][20][21] . In this regard Al2O3 is one of the widely studied materials grown by ALD to improve oxygen and moisture barrier properties of synthetic and bio-based plastics, biopolymers, and fiber-based materials 18,21,22 .…”

Section:  Introductionmentioning

confidence: 99%

“…In addition to the effect of Al2O3 ALD coatings on gas permeability, its effect on wetting properties has been investigated 16,18,19,[23][24][25] . On the hydrophilic PLA films, PLA-coated boards, and polyethyleneterephthalate films, the contact angles of water droplet decreased after Al2O3 ALD 18,19,25 .…”

Section:  Introductionmentioning

confidence: 99%

Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al₂O₃ Thin Films

Mirvakili

Bui

Ommen

et al. 2016

ACS Appl. Mater. Interfaces

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 ABSTRACTSurface modification of cellulosic paper is demonstrated by employing plasma assisted atomic layer deposition. Al2O3 thin films are deposited on paper substrates, prepared with different fiber sizes, to improve their barrier properties. Thus, a hydrophobic paper is created with low gas permeability by combining the control of fiber size (and structure) with atomic layer deposition of Al2O3 films. Papers are prepared using Kraft softwood pulp and thermomechanical pulp. The cellulosic wood fibers are refined to obtain fibers with smaller length and diameter. Films of Al2O3, 10, 25, and 45 nm in thickness, are deposited on the paper surface. The work demonstrates that coating of papers prepared with long fibers efficiently reduces wettability with slight enhancement in gas permeability, while on shorter fibers, it results in significantly lower gas permeability. Wettability studies on Al2O3 deposited paper substrates, have shown water wicking and absorption over time only in papers prepared with highly refined fibers. It is also shown that there is a certain fiber size at which the gas permeability assumes its minimum value, and further decrease in fiber size will reverse the effect on gas permeability.

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“…Most concepts are based on keeping the precursor gases in confined volumes and passing the substrate through these volumes to achieve the required successive precursor doses. 24,[28][29][30][31] Envisioned applications of nanostructured particles prepared by ALD, such as catalysis and energy storage, typically require large amounts of materials. Therefore, it is desirable to develop a spatial ALD process for particles too.…”

Section: Introductionmentioning

confidence: 99%

Continuous production of nanostructured particles using spatial atomic layer deposition

Ommen¹,

Kooijman²,

Niet³

et al. 2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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In this paper, the authors demonstrate a novel spatial atomic layer deposition (ALD) process based on pneumatic transport of nanoparticle agglomerates. Nanoclusters of platinum (Pt) of $1 nm diameter are deposited onto titania (TiO 2 ) P25 nanoparticles resulting to a continuous production of an active photocatalyst (0.12-0.31 wt. % of Pt) at a rate of about 1 g min À1 . Tuning the precursor injection velocity (10-40 m s À1 ) enhances the contact between the precursor and the pneumatically transported support flows. Decreasing the chemisorption temperature (from 250 to 100 C) results in more uniform distribution of the Pt nanoclusters as it decreases the reaction rate as compared to the rate of diffusion into the nanoparticle agglomerates. Utilizing this photocatalyst in the oxidation reaction of Acid Blue 9 showed a factor of five increase of the photocatalytic activity compared to the native P25 nanoparticles. The use of spatial particle ALD can be further expanded to deposition of nanoclusters on porous, micron-sized particles and to the production of core-shell nanoparticles enabling the robust and scalable manufacturing of nanostructured powders for catalysis and other applications.

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Barrier properties of plastic films coated with an Al2O3 layer by roll-to-toll atomic layer deposition

Cited by 49 publications

References 28 publications

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al₂O₃ Thin Films

Continuous production of nanostructured particles using spatial atomic layer deposition

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Barrier properties of plastic films coated with an Al2O3 layer by roll-to-toll atomic layer deposition

Cited by 49 publications

References 28 publications

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films

Continuous production of nanostructured particles using spatial atomic layer deposition

Contact Info

Product

Resources

About

Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al₂O₃ Thin Films