Barrier-metal-free (BMF), Cu dual-damascene interconnects with Cu-epi-contacts buried in anti-diffusive, low-k organic film

Tada, Munehiro; Ohtake, Hiroto; Harada, Y.; Hiroi, Masayuki; Saito, Shinobu; Onodera, T.; Furutake, N.; Kawahara, J.; Tagami, M.; Kinoshita, Keizo; Fukai, T.; Mogami, Tohru; Hayashi, Y.

doi:10.1109/vlsit.2001.934923

Cited by 4 publications

(2 citation statements)

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“…Cu/dense organic damascene structures without barrier have been fabricated with a dielectric spacing of 90 nm. 2,3) In order to investigate the scalability of organic polymers both in terms of k-value and dimension, we have been reducing the k-value of an organic polymer down to 2.2 by adding porosity. Furthermore we have been building single damascene structures with dielectric spacings ranging from 80 to 20 nm, thus spanning the range of spacings of four technology nodes.…”

Section: Introductionmentioning

confidence: 99%

Advanced Organic Polymer for the Aggressive Scaling of Low-k Materials

Pantouvaki

Huffman

Zhao

et al. 2011

Jpn. J. Appl. Phys.

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An advanced organic polymer material of k = 2.2 has been successfully integrated in Cu lines with dielectric spacing from 80 to 20 nm. Cu lines with both TaN/Ta barrier and no barrier were fabricated. Current–voltage (I–V) and time dependent dielectric breakdown (TDDB) measurements were performed to study the scalability of this material. In the case of TaN/Ta barrier, no TDDB degradation was observed at 100 °C as the dielectric spacing changed from 80 to 30 nm. In the case of no barrier, TDDB performance at 100 °C was better than that of SiO2 without a barrier. However, TDDB at 200 °C showed a clear degradation. In contrast, no such degradation was present when TaN/Ta barrier was used.

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Section: Introductionmentioning

confidence: 99%

Advanced Organic Polymer for the Aggressive Scaling of Low-k Materials

Pantouvaki

Huffman

Zhao

et al. 2011

Jpn. J. Appl. Phys.

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“…1) Barriermetal-free Cu damascene structures were actually fabricated with BCB ILD. 2,3) The value of the specific dielectric constant k of BCB remains, however, in the range of 2.6 -2.8. In the advanced backend of the line process, further reduction in k is needed to reduce the interconnect signal delay.…”

Section: Introductionmentioning

confidence: 99%

Computer-aided tomography and physical experiment

Pikalov¹,

Preobrazhenskii²

1983

Sov. Phys. Usp.

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The barrier properties of divinyl siloxane-benzocyclobutene (DVS-BCB) films formed by plasma-enhanced polymerization were studied for ultralow-k porous silica (po-SiO) interlayer dielectrics. Time-dependent dielectric breakdown (TDDB) measurements of blanket Cu/BCB/Si metal-insulator-semiconductor (MIS) capacitors showed no polarity dependence of the bias-temperature stresses at 200 C under 2 MV/cm, indicating that Cu ions hardly drifted into the BCB film with the positive bias stress. On the other hand, Cu/SiOC/Si MIS capacitors under the positively biased Cu showed a significant degradation in the TDDB lifetime compared with the negative bias case. The barrier effect of the thin BCB was confirmed from the TDDB measurements using Cu/BCB/ultralow-k-po-SiO/Si stacked MIS structures. The TDDB lifetime of the stacked MIS capacitor was improved more than 30-fold by the use of 15-nm-thick BCB on po-SiO. The electric field and temperature dependences of the TDDB lifetime of the stacked MIS structure indicated that the TDDB lifetime of po-SiO capped with 15-nm-thick BCB is longer than 10 years at 125 C and 1.4 MV/cm. We conclude that the barrier property of BCB that is as thin as 15 nm is effective for preventing Cu ion drift into interlayer dielectrics.

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