Barrier Integrity of Electroless Diffusion Barriers and Organosilane Monolayer against Copper Diffusion under Bias Temperature Stress

Mitsumori, Akiyoshi; Fujishima, Shota; Ueno, Kazuyoshi

doi:10.1143/jjap.51.05eb03

Cited by 2 publications

(1 citation statement)

References 25 publications

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“…[6][7][8] Recently, many researchers have exhibited an interest in the growth of electroless Ni-B films because of the low-cost techniques for the production of micro and nano-electronic technologies. [9][10][11] Electroless Ni film growth on an Ag paste/anodized Al substrate is very difficult, however, because Ni does not react well with Ag due to the large positive heat of formation between Ni and Ag ( H m = +22 kJ/mole). 12 In addition, the anodized Al substrate can be damaged by a strong acid and/or strong alkali solution.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of the Ni–B Film in Printed Circuit Board for High-Power Light-Emitting Diodes

Rha

Cho²,

Yoon³

et al. 2013

j. nanosci. nanotech.

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To develop metal printed circuit boards for a high-power light-emitting diode package using electroless plated Ni-B films on an all-in-one Al2O3-Al substrate with a 10 nm pore size, the growth mode of an electroless Ni-B film on a screen-printed Ag pattern/Al2O3-Al substrate was studied. So as not to damage the Al2O3-AI substrate, a nearly neutral Ni plating solution bath (pH 6.5) included dimethylamine borane was used. It was confirmed that the Ni-B film was selectively grown on the printed Ag paste layer, without growth on the Al2O3. The structure of the electroless plated Ni-B film was amorphous, and the deposition rate of the film was 1.64 +/- 0.078 nm/sec. According to the increase in plating time, the grain sizes of the electroless plated Ni-B film became bigger, and the surface morphology gradually became flatter. In addition, both the mass difference and the film thickness were changed linearly. From these results, it can be concluded that the electroless Ni-B film on printed Ag paste grows immediately from the beginning, and then grows linearly with increasing plating time.

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Section: Introductionmentioning

confidence: 99%

Characteristics of the Ni–B Film in Printed Circuit Board for High-Power Light-Emitting Diodes

Rha

Cho²,

Yoon³

et al. 2013

j. nanosci. nanotech.

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show abstract

Reliability tests of electroless barriers against copper diffusion under bias-temperature stress with n- and p-type substrates

Ueno¹,

Fujishima²,

Yamashita³

et al. 2016

Jpn. J. Appl. Phys.

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To investigate the similarity and difference of substrate conduction type in the time-dependent dielectric breakdown (TDDB) tests for the barrier integrity against Cu diffusion under bias-temperature stress (BTS), the TDDB reliability of electroless NiB and CoWP/NiB was determined by metal oxide semiconductor (MOS) structures on n-type Si (n-Si) substrates, and the test results were compared with those using p-type Si (p-Si) substrates. The TDDB results and mechanism were observed to be qualitatively the same as Cu diffusion for both conduction types. However, the TDDB lifetime using p-Si was found to be potentially shorter because of the reverse bias conditions than that using n-Si under the forward bias conditions.

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Barrier Integrity of Electroless Diffusion Barriers and Organosilane Monolayer against Copper Diffusion under Bias Temperature Stress

Cited by 2 publications

References 25 publications

Characteristics of the Ni–B Film in Printed Circuit Board for High-Power Light-Emitting Diodes

Characteristics of the Ni–B Film in Printed Circuit Board for High-Power Light-Emitting Diodes

Reliability tests of electroless barriers against copper diffusion under bias-temperature stress with n- and p-type substrates

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