Barrier height temperature coefficient in ideal Ti/n-GaAs Schottky contacts

Electrical parameters of a DC sputtered Mo/n-type 6H-SiC Schottky barrier diode

“…They have been used in a number of applications including gates for MS field effect transistors, solar cells and detectors [5]. The main characteristic parameters of MS contacts or Schottky contacts are barrier height and ideality factors.…”

Perylene diimide: Synthesis, fabrication and temperature dependent electrical characterization of heterojunction with p-silicon

“…This, actually, confirms Cheungs' approach [49] on the N-BuHHPDI/p-Si heterojunction. Furthermore, for the case of high series resistance present in diode, Norde introduced an another technique to evaluate barrier height and series resistance using the following function [43,50,51]:…”

Evaluation of lateral barrier height of inhomogeneous photolithography-fabricated Au/n-GaAs Schottky barrier diodes from 80K to 320K

“…In this behavior, the straight line fitted to the experimental values for the T o effect should be parallel to that of the ideal SC behavior [3,13]. In order to explain the change in n with temperature, various mechanisms which take the density distribution of N ss , quantum mechanical tunneling and image force lowering into account have been proposed in literature [34][35][36][37][38][39][40][41][42][43][44][45].…”