Barrier Engineered Infrared Photodetectors Based on Type-II InAs/GaSb Strained Layer Superlattices

Gautam, Nutan; Myers, Stephen; Barve, Ajit V.; Klein, Brianna; Smith, E. P.; Rhiger, David R.; Kim, Ha Sul; Tian, Zhaobing; Krishna, S.

doi:10.1109/jqe.2012.2236643

Cited by 41 publications

(28 citation statements)

References 28 publications

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“…These include lead salt alloys, InSb, QW IR detectors, QD IR detectors and type II superlattice (T2SL)-based detectors. Although significant effort has been devoted to developing these alternative IR technologies [2,11,[13][14][15][16][17][18][19][20][21][22][23][24], at this stage, HgCdTe IR detectors still dominate high performance IR systems. However, HgCdTe IR technology has its own challenges, including: (1) p-type doping control; (2) lower cost and larger array format size for FPAs; (3) higher operating temperatures; (4) multi-band detection; and (5) advanced plasma dry etching control.…”

Section: Ii-vi-based Irpdmentioning

confidence: 99%

Emerging technologies for high performance infrared detectors

2017

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Infrared photodetectors (IRPDs) have become important devices in various applications such as night vision, military missile tracking, medical imaging, industry defect imaging, environmental sensing, and exoplanet exploration. Mature semiconductor technologies such as mercury cadmium telluride and III-V material-based photodetectors have been dominating the industry. However, in the last few decades, significant funding and research has been focused to improve the performance of IRPDs such as lowering the fabrication cost, simplifying the fabrication processes, increasing the production yield, and increasing the operating temperature by making use of advances in nanofabrication and nanotechnology. We will first review the nanomaterial with suitable electronic and mechanical properties, such as two-dimensional material, graphene, transition metal dichalcogenides, and metal oxides. We compare these with more traditional lowdimensional material such as quantum well, quantum dot, quantum dot in well, semiconductor superlattice, nanowires, nanotube, and colloid quantum dot. We will also review the nanostructures used for enhanced lightmatter interaction to boost the IRPD sensitivity. These include nanostructured antireflection coatings, optical antennas, plasmonic, and metamaterials.

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Section: Ii-vi-based Irpdmentioning

confidence: 99%

Emerging technologies for high performance infrared detectors

2017

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“…The band profile for a pBiBn design is shown in Figure 18(a), and the detector layer structure given in Figure 18(b) [24,101,102]. It consists of an n-contact layer, followed by a hB layer, an intrinsic absorber i-region, followed by an eB layer, and finally a p-contact layer.…”

Section: Pbibn Detectormentioning

confidence: 99%

“…The reduction of electric field within the absorber in the pBiBn structure effects a smaller depletion region, which further reduces the SRH dark current and suppresses TAT and BTB tunneling dark current components [24,38]. Figure 19(a) and (b) plot I-V characteristics versus applied bias and spectral response vs. wavelength, respectively, for SLS pBiBn detectors [102,104].…”

Section: Two-dimensional Materials For Photodetectormentioning

confidence: 99%

Design and Development of Two-Dimensional Strained Layer Superlattice (SLS) Detector Arrays for IR Applications

Sood¹,

Zeller²,

Welser³

et al. 2018

Two-Dimensional Materials for Photodetector

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The implementation of strained layer superlattices (SLS) for detection of infrared (IR) radiation has enabled compact, high performance IR detectors and two-dimensional focal plane arrays (FPAs). Since initially proposed three decades ago, SLS detectors exploiting type II band structures existing in the InAs/GaSb material system have become integral components in high resolution thermal detection and imaging systems. The extensive technological progress occurring in this area is attributed in part to the band structure flexibility offered by the nearly lattice-matched InAs/AlSb/Ga(In)Sb material system, enabling the operating IR wavelength range to be tailored through adjustment of the constituent strained layer compositions and/or thicknesses. This has led to the development of many advanced type II SLS device concepts and architectures for low-noise detectors and FPAs operating from the short-wavelength infrared (SWIR) to very long-wavelength infrared (VLWIR) bands. These include double heterostructures and unipolar-barrier structures such as graded-gap M-, W-, and N-structures, nBn, pMp, and pBn detectors, and complementary barrier infrared detector (CBIRD) and pBiBn designs. These diverse type II SLS detector architectures have provided researchers with expanded capabilities to optimize detector and FPA performance to further benefit a broad range of electrooptical/IR applications.

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“…All authors are with the Electronics and Nanoscale Division in the School of Engineering at the University of Glasgow, Glasgow G12 8LT, U.K. band gap or unique band-structure alignments [2][3][4]. In order to make an imaging device, such as a focal plane array (FPA), it is required that the photodiodes must be individually addressable using row and column decoding.…”

Section: Introduction Edium Wavelength Infrared (Mwir) or Mid-ir Dmentioning

confidence: 99%

Monolithic Integration of an Active InSb-Based Mid-Infrared Photopixel With a GaAs MESFET

Xie

Pusino

Khalid

et al. 2015

IEEE Trans. Electron Devices

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Barrier Engineered Infrared Photodetectors Based on Type-II InAs/GaSb Strained Layer Superlattices

Cited by 41 publications

References 28 publications

Emerging technologies for high performance infrared detectors

Emerging technologies for high performance infrared detectors

Design and Development of Two-Dimensional Strained Layer Superlattice (SLS) Detector Arrays for IR Applications

Monolithic Integration of an Active InSb-Based Mid-Infrared Photopixel With a GaAs MESFET

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