Barium strontium titanate nanocrystalline thin films prepared by soft chemical method

Mazon, Talita; Zaghete, M. A.; Varela, José Arana; Longo, Elson

doi:10.1016/j.jeurceramsoc.2007.02.036

Cited by 20 publications

(11 citation statements)

References 20 publications

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“…As the frequency increases these dipoles due to space charge do not respond resulting in decrease in the dielectric constant. The same type of frequency dependent dielectric behavior is found in many ferroelectric thin films [17]. The high dielectric loss at low frequency in this film confirmed the presence of space charges at the electrode/film interfaces.…”

Section: Dielectric Propertiessupporting

confidence: 77%

Structure and Properties of BT and BST Thin Films

Sharma

2013

Ferroelectrics

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Barium titanate [BT] and barium strontium titanate [BST] solid solution films have been fabricated by a modified sol-gel processing technique from barium acetate {Ba(CH 3 COOH) 2 }, strontium acetate [Sr(CH 3 COOH) 2] and titanium (IV) Isopropoxide [Ti[(CH 3 ) 2 CHO] 4 ] precursors. The as-fired films were found to be amorphous that crystallized to perovskite phase after annealing the films at 550 • C in air for one hour. The dielectric constant (ε) and loss tangent (tanδ) of the BaTiO 3 film at 1 kHz was found to be 360 and 0.01 respectively. The dielectric constant showed a broad anomaly peak at 130 • C that confirms ferroelectric-paraelectric transition. The room temperature dielectric constant and loss factor of this film were found to be 450 and 0.005 respectively. The dielectric anomaly peak of the BST film was found to shift towards lower temperature with Sr content. Both BT and BST showed butterfly capacitance-voltage (C-V) and conductance-voltage (G-V) loops, confirming the existence of ferroelectricity in these films.

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Section: Dielectric Propertiessupporting

confidence: 77%

Structure and Properties of BT and BST Thin Films

Sharma

2013

Ferroelectrics

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“…Barium Strontium Titanate (BST) in thin film form is one of the most promising ferroelectric materials for ferroelectric field effect transistor (FeFET) application due to the desirable properties such as high permittivity and relatively high remnant polarization [8,9]. Relatively few studies reported the electrical properties for BST as a MIS junction [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of silicon-based Ba<inf>0.7</inf>Sr<inf>0.3</inf>TiO<inf>3</inf> thin films for FeFET applications

Saif

Poopalan

2012

2012 4th Asia Symposium on Quality Electronic Design (ASQED)

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Ferroelectric Ba 0.7 Sr 0.3 TiO 3 thin films have been fabricated as MFIS and MFM configurations using sol-gel technique to study the possibility of using these films in FeFET applications. To ensure the quality of the films, the dielectric properties of the material within MFM structure have been investigated using an impedance analyzer which shows good quality for the films. The ferroelectric properties of the MFM type films were studied using Sawyer-Tower circuit. The films show hysteresis loop, its strength increases with the film thickness which is attributed the grain size effect. Whereas the ferroelectric properties of the MFIS type films were studied using capacitance-voltage (C-V) characteristics. The films show memory window its width increases with the film thickness which is also attributed the grain size effect.

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“…The Curie temperature of BST thin films varies through a long range of values depending on the Ba:Sr ratio [3], which in turn controls the phase of the film, i.e., to be in ferroelectric (with tetragonal lattice) or paraelectric (with cubic lattice) phase. Furthermore, the size of BST grains is directly related to the Ba:Sr ratio, as Ba ions increase in the lattice the grain size increases [4,5], however, the grain size is directly related to the grain boundaries area [6]; as a result, the electrical properties of the material change.…”

Section: Introductionmentioning

confidence: 99%