Bandwidth modeling and optimization of PIN photodiodes

Fernandes, Carlos M.; Pereira, J.M.T.

doi:10.1109/eurocon.2011.5929220

Cited by 11 publications

(7 citation statements)

References 7 publications

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“…From this figure, it is seen that the maximum bandwidth of about 29 GHz may be obtained for devices approximately 1 µm long with a 0.5 µm absorption region length. For the same length, if the area of the device is decreased, the capacitance also decreases, and an increase in the device's bandwidth is expected [3]. These results show a clear improvement compared with those for the conventional PIN [3].…”

Section: Resultssupporting

confidence: 68%

“…Figure 10 shows the maximum bandwidth versus total length for devices with several cross-sectional areas. It is observed that when the area changes from 1000 µm 2 to 100 µm 2 , the optimized bandwidth may change from 22 GHz up to 58 GHz due to a decrease in the device's junction capacitance [3]. The contour plot of the constant bandwidth, related to  a and  d , for U 1 = 6 V and A = 500 µm 2 , is shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…The choice of this particular ternary semiconductor is determined by its high absorption coefficient in the 1.0 µm -1.6 µm wavelength range, because it is lattice matched to InP. Experimental work and theoretical work have shown that there is an upper limit for the PIN photodiode's bandwidth, which has resulted from the interplay between the transit time and the capacitive effects [2,3]. Additionally, the bandwidth-quantum efficiency product is nearly constant for a wide range of absorption region lengths, taking values of the order of tens of GHz.…”

Section: Introductionmentioning

confidence: 99%

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Frequency response optimization of dual depletion InGaAs/InP PIN photodiodes

Pereira

Torres

2016

Photonic Sens

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Abstract:The frequency response of a dual depletion p-i-n (PIN) photodiode structure is investigated. It is assumed that the light is incident on the N side and the drift region is located between the N contact and the absorption region. The numerical model takes into account the transit time and the capacitive effects and is applied to photodiodes with non-uniform illumination and linear electric field profile. With an adequate choice of the device's structural parameters, dual depletion photodiodes can have larger bandwidths than the conventional PIN devices.

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Section: Resultssupporting

confidence: 68%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Frequency response optimization of dual depletion InGaAs/InP PIN photodiodes

Pereira

Torres

2016

Photonic Sens

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“…The provided model accurately describes transit, diffusion and parasitic effects. Analysis and optimization of the frequency response of the photodiodes was also provided in [8][9][10] it concerns the effect of the absorption layer width, polarization voltage, temperature, wavelength and direction of the incident light on the transit time and frequency response of photodiodes.…”

Section: Introductionmentioning

confidence: 99%

Improvements of photodiodes structures for communication applications

Aissat

Besseghi

Bey

et al. 2015

2015 Third World Conference on Complex Systems (WCCS)

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Photogenerated carriers in a photodiode drift in the junction before joining the circuit. We must use a quite thin depletion region so that their transit time does not penalize the microwave response of the devices. However, when the depletion region decreases the component capacity increases, which highly limits the microwave response of this latter. Replace the completely absorbent depletion region by a mixed depletion region increases the pure transit cut-off frequency for the same thickness of the depletion region. We use this property in what follows to optimize the performance of PIN photodiode based on InP/InGaAs, adapted for the photodetection at the wavelength of 1.55 μm. The obtained results show that the maximum area of photodiodes with mixed depletion regions with thin absorbent exceeds by 64% that of the photodiodes with completely absorbent depletion regions for the same bandwidth. Their maximum absorption volume exceeds by 8% that of the photodiodes with completely absorbent depletion regions for the same bandwidth. Both types of components are also compared on the abacuses when the thickness of the absorbent and the surface are imposed.

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“…In the conventional pin photodetectors the bandwidth and quantum efficiency cannot be optimized simultaneously. In fact by decreasing the absorption region length there may be an increase of the bandwidth but the quantum efficiency decreases leading to a product bandwidth×quantum efficiency which is nearly constant for a wide range of absorption region lengths, taking values of the order of tens of GHz (Fernandes & Pereira, 2011).…”

Section: Introductionmentioning

confidence: 99%

Frequency Response Simulation Analysis of Waveguide Photodetectors

Torres¹,

Pereira²

2017

APR

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In waveguide photodetectors the bandwidth and the quantum efficiency may be specified almost independently because the absorption of light is in the longitudinal direction whereas the current flows in the transversal direction. Then, these devices may combine high bandwidth with high quantum efficiency. In this paper a detailed numerical analysis of the frequency response of waveguide photodetectors is presented. The calculations show that the capacitive effects limit the bandwidth but that by an appropriate choice of a series inductance the maximum bandwidth almost doubles.

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Bandwidth modeling and optimization of PIN photodiodes

Cited by 11 publications

References 7 publications

Frequency response optimization of dual depletion InGaAs/InP PIN photodiodes

Frequency response optimization of dual depletion InGaAs/InP PIN photodiodes

Improvements of photodiodes structures for communication applications

Frequency Response Simulation Analysis of Waveguide Photodetectors

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