Bandwidth improvement for germanium photodetector using wire bonding technology

Chen, Guan-Yu; Yu, Yu; Deng, Shuanghui; Liu, Lei; Zhang, Chi

doi:10.1364/oe.23.025700

Cited by 29 publications

(28 citation statements)

References 17 publications

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“…The second configuration is to butt-couple the silicon waveguide to the Ge detector [210][211][212][213][214]. Although butt-coupling has large coupling efficiency, the most popular configuration of waveguide-based Ge-on-Si detectors is the third configuration, where the silicon waveguide is located underneath the Ge detector, because of its ability of integration in a CMOS process [210,[215][216][217][218][219][220][221]. As shown in Table 3, most of the recently demonstrated high porformance Ge-on-Si detectors are based on the bottom-coupling configuration.…”

Section: Detectorsmentioning

confidence: 99%

On-chip silicon photonic signaling and processing: a review

2018

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Section: Detectorsmentioning

confidence: 99%

On-chip silicon photonic signaling and processing: a review

2018

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“…Although the Ge absorption region is doubled to realized high power for type C, the large bandwidth can still be maintained based on the equivalent parallel junction resistor structure. In order to further understand its operation principle, the equivalent circuit model is adopted [15,17,18,26]. For the typical Ge PIN PD (type A/B), it can be modeled as a simple RC circuit, as shown in Fig.…”

Section: Device Design and Fabricationmentioning

confidence: 99%

“…Due to the narrow intrinsic region of the Ge PD, the carrier transit time is small enough and can be largely ignored [15,17]. Therefore, according to the Eq.…”

Section: Device Design and Fabricationmentioning

confidence: 99%

“…By contrast, silicon based devices featured with low cost, high thermal conductivity and easy compatibility with complementary metal oxide semiconductor (CMOS) technology seems a possible solution for these problems. As one of the key components of silicon photonics, the waveguide coupling germanium photodetector (Ge PD) has attracted great attention during the last decade [10][11][12][13][14][15][16][17][18] and most of the researches focus on the improvement of the dark current [12], the responsivity [14] and the bandwidth [15,17]. It is very meaningful to improve both the bandwidth and saturation power of the Ge PD simultaneously.…”

Section: Introductionmentioning

confidence: 99%

“…The carrier transit time and RC parasitic parameter are the two main factors that limit the frequency response of the lumped Ge PD [17]. The high speed operation can be realized either by reducing the carrier transit time or the parasitic parameter.…”

Section: Introductionmentioning

confidence: 99%

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High speed and high power polarization insensitive germanium photodetector with lumped structure

Chen

Xiao³

et al. 2016

Opt. Express

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We propose and demonstrate a high speed and high power polarization insensitive germanium photodetector (Ge PD) with lumped structure based on related parallel Ge absorption regions. Two absorption regions are double sides illuminated to optimize the space charge density and the two dimensional (2D) grating coupler is adopted for both coupling and polarization independent operation. Being different from previous reported high power scheme with separate absorption areas, the proposed structure is specifically designed with doubled but related Ge absorption regions, forming the equivalent parallel resistor and thus the parasitic parameter can be engineered to ensure a simultaneous large bandwidth. The bandwidth is measured to be >35 GHz, while the maximum current density is measured to be 1.152 mA/μm³. The dark current and the responsivity of the proposed Ge PD are measured to be 1.82 μΑ and 1.06 A/W. Modulated signals experimentally validate the high speed operation and doubled power handling capacity for the proposed scheme. Furthermore, the bit error rate results show the superior performance for the proposed Ge PD at high photocurrent.

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High‐Speed Photodetectors on Silicon Photonics Platform for Optical Interconnect

Chen

Shi

et al. 2022

Laser & Photonics Reviews

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A photodetector (PD) converts optical signals into electrical ones and is widely used in optical interconnect. High-speed PDs are in high demand as they are necessary to meet requirements of large-capacity optical interconnect. Many high-performance PDs with various absorption materials and structures are demonstrated on silicon photonics platform, including germanium (Ge) PDs, germanium tin (GeSn) PDs, heterogeneous integrated III-V PDs, all silicon (Si) PDs, 2D material PDs, etc. These kinds of PDs continue to set new records of speed and open an era of ultrahigh-speed optical interconnect. A comprehensive summary of the state-of-the-art high-speed PDs on silicon photonics platform is necessary and meaningful. In this review, the basic metrics and key process technologies for the PDs are introduced, and various types of high-speed PDs based on silicon photonics platform are reviewed and discussed. Furthermore, the summary and perspectives are provided. It is hoped that this review can provide readers more insights into recent advances in high-speed PDs on silicon photonics platform and contribute to the further development.

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Bandwidth improvement for germanium photodetector using wire bonding technology

Cited by 29 publications

References 17 publications

On-chip silicon photonic signaling and processing: a review

On-chip silicon photonic signaling and processing: a review

High speed and high power polarization insensitive germanium photodetector with lumped structure

High‐Speed Photodetectors on Silicon Photonics Platform for Optical Interconnect

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