Bandwidth control in a 3d1 perovskite vanadate Ca1−xSrxVO3

Inoue, Isao; Shirakawa, Naoki; Goto, O.; Makino, Hisao; Ishikawa, Masayasu

doi:10.1016/s0921-4526(98)00982-x

Cited by 1 publication

(2 citation statements)

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“…[ 46 ] If octahedral rotation occurs, the in‐plane hopping parameter decreases (increases) under compressive (tensile) strain due to the distortion of the BOB bond angle. [ 16 ] Conversely, here the strain is expected to induce a modulation of the atomic bond length rather than the angle. In order to rule out the bending of the VOV bond angle off its nominal 180°, scanning transmission electron microscopy (STEM) is employed.…”

Section: Resultsmentioning

confidence: 99%

“…[ 11–15 ] For example, in the Ca 1‐x Sr x VO 3 system, the value of x controls the VOV bond angle without changing the vanadium valance state, which was shown to result in bandwidth modulation. [ 16,17 ] In the case of epitaxial strain, the asymmetric nature of the structural distortion typically results in orbital symmetry breaking between the in‐plane and out‐of‐plane orbitals.…”

Section: Introductionmentioning

confidence: 99%

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Bandwidth Control and Symmetry Breaking in a Mott‐Hubbard Correlated Metal

Shoham

Baskin

Tiwald

et al. 2023

Adv Funct Materials

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In Mott materials strong electron correlation yields a spectrum of complex electronic structures. Recent synthesis advancements open realistic opportunities for harnessing Mott physics to design transformative devices. However, a major bottleneck in realizing such devices remains the lack of control over the electron correlation strength. This stems from the complexity of the electronic structure, which often veils the basic mechanisms underlying the correlation strength. This study presents control of the correlation strength by tuning the degree of orbital overlap using picometer‐scale lattice engineering. This study illustrates how bandwidth control and concurrent symmetry breaking can govern the electronic structure of a correlated SrVO3 model system. This study shows how tensile and compressive biaxial strain oppositely affect the SrVO3 in‐plane and out‐of‐plane orbital occupancy, resulting in the partial alleviation of the orbital degeneracy. The spectral weight redistribution under strain is derived and explained, which illustrates how high tensile strain drives the system toward a Mott insulating state. Implementation of such concepts can push correlated electron phenomena closer toward new solid‐state devices and circuits. These findings therefore pave the way for understanding and controlling electron correlation in a broad range of functional materials, driving this powerful resource for novel electronics closer toward practical realization.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%