Bandstructures of unstrained and strained silicon nanowire

Zhang, Nevin L.; Lou, Haijun; Liu, Zhiwei; Fang, He; Chan, Mansun

doi:10.1109/icsict.2010.5667741

Cited by 1 publication

(1 citation statement)

References 6 publications

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“…Recently, Sajjad et al and other researchers who investigated the effects of uniaxial strain on the band structure of silicon nanowires using a semiempirical sp 3 d 5 s Ãorbital tight binding model have maintained that the energy of the second valley at 0:36 Â =a for the Brilluoin zone decreases with both compressive and tensile strains and that the energy of the top valence band increases when both tensile and compressive strains are applied. [28][29][30] We should note here that the modulation in the band structure occurs in silicon nanowires with diameters of sub-10 nm owing to the quantum confinement effect.…”

Section: Resultsmentioning

confidence: 92%

Strain-Dependent Characteristics of Triangular Silicon Nanowire-Based Field-Effect Transistors on Flexible Plastics

Koo

Jeon

Lee

et al. 2011

Jpn. J. Appl. Phys.

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Top-gate field-effect transistors (FETs) based on triangular silicon nanowires (SiNWs) obtained from a silicon bulk wafer using a conventional silicon manufacturing technology are constructed on flexible plastic substrates. Their field-effect mobility and peak transconductance are enhanced by 10% in the upwardly bent state and by 29% in the downwardly bent state at a strain of 1.02%, compared with the flat state. The strain effect resulting from the bending of the flexible substrates is higher in the downward state than in the upward state, and the increase in strain improves the performance of SiNW-based FETs. Moreover, their device performance is stable even after bending the substrate several thousand times.

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Section: Resultsmentioning

confidence: 92%