Bandstructure effect on high-field transport in GaN and GaAlN

Krishnamurthy, Srinivasan; Schilfgaarde, Mark van; Sher, A.; Chen, A.-B.

doi:10.1063/1.119767

Cited by 53 publications

(27 citation statements)

References 11 publications

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“…Transport calculations have been reported for several nitride alloys in both zinc blende and wurtzite structures [38][39][40][41]. Because the calculation of the hot electron transport is sensitive to details of the band structures employed, results reported in these works differ substantially.…”

Section: Electronic Propertiesmentioning

confidence: 80%

“…This character is illustrated in Figure 5a for the zinc blende phase and Figure 5b for the wurtzite phase of GaN; aside from the nitrides, this has not been found in any other group IV, III-V compound, or II-VI compound seminconductor. Also, the empirically derived nitride band structures used in other transport studies of the nitrides apparently did not possess this property [39][40][41]. As a consequence of the inflection point lying below the minimum of the first satellite valley, an anomalous drift velocity-field characteristic is predicted, shown in Figures 6a and 6b.…”

Section: Electronic Propertiesmentioning

confidence: 95%

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Computational Materials Science, an Increasingly Reliable Engineering Tool: Anomalous Nitride Band Structures and Device Consequences

Sher

Schilfgaarde

Berding

et al. 1999

MRS Internet j. nitride semicond. res.

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Computational materials science has evolved in recent years into a reliable theory capable of predicting not only idealized materials and device performance properties, but also those that apply to practical engineering developments. The codes run on workstations and even now are fast enough to be useful design tools. A review will be presented of the current status of this rapidly advancing field. Examples of the accuracy of the codes are displayed by comparing the predicted atomic volumes, and cohesive and excess energies of several materials with experiment. As a further demonstration of the methods, the band structures of AlN, GaN, and InN in wurtzite and zinc blende structures will be presented. There are anomalies in the conduction and valence bands of these materials. Some consequences on light emitting and power devices made from these materials will be examined.

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Section: Electronic Propertiesmentioning

confidence: 80%

Section: Electronic Propertiesmentioning

confidence: 95%

Computational Materials Science, an Increasingly Reliable Engineering Tool: Anomalous Nitride Band Structures and Device Consequences

Sher

Schilfgaarde

Berding

et al. 1999

MRS Internet j. nitride semicond. res.

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View full text Add to dashboard Cite

show abstract

“…While the negative differential mobility exhibited by the velocity-field characteristics associated GaN is widely attributed to inter-valley transitions, and while direct experimental evidence confirming this has been presented [255], Krishnamurthy et al [256] suggest that instead the inflection points in the bands, located in the vicinity of the C valley, are primarily responsible for the negative differential mobility exhibited by wurtzite GaN. The relative importance of these two mechanisms, i.e., inter-valley transitions and inflection point considerations, were evaluated by Krishnamurthy et al [256], both for the case of wurtzite GaN and an alloy of GaN with another III-V nitride semiconductor.…”

Section: Electron Transport Within Gan: a Reviewmentioning

confidence: 94%

A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review

Siddiqua

Hadi

Shur

et al. 2015

J Mater Sci: Mater Electron

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Wide energy gap semiconductors are broadly recognized as promising materials for novel electronic and optoelectronic device applications. As informed device design requires a firm grasp of the material properties of the underlying electronic materials, the electron transport that occurs within the wide energy gap semiconductors has been the focus of considerable study over the years. In an effort to provide some perspective on this rapidly evolving and burgeoning field of research, we review analyzes of the electron transport within some wide energy gap semiconductors of current interest in this paper. In order to narrow the scope of this review, we will primarily focus on the electron transport that occurs within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide in this review, these materials being of great current interest to the wide energy gap semiconductor community; indium nitride, while not a wide energy gap semiconductor in of itself, is included as it is often alloyed with other wide energy gap semiconductors, the resultant alloys being wide energy gap semiconductors themselves. The electron transport that occurs within zinc-blende gallium arsenide is also considered, albeit primarily for bench-marking purposes. Most of our discussion will focus on results obtained from our ensemble semi-classical three-valley Monte Carlo simulations of the electron transport within these materials, our results conforming with state-of-the-art wide energy gap semiconductor orthodoxy. A brief tutorial on the Monte Carlo electron transport simulation approach, this approach being used to generate the results presented herein, is also provided. Steady-state and transient electron transport results are presented. The evolution of the field, and a survey of the current literature, are also featured. We conclude our review by presenting some recent developments on the electron transport within these materials.

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“…Wide-bandgap III to V nitrides exhibit bulk NDR effect in threshold fields above 80 kV∕cm. 123 In addition, thanks to shorter energy relaxation time in GaN among other conventional III to V semiconductor materials, 124 GaN-based NDR diode oscillators offer much higher electron velocity and reduced time constants compared to conventional GaAs Gunn diodes. As a result, GaN-based NDR diodes can generate frequencies in the THz regime.…”

Section: Gan-based Negative Differential Resistance Diode Oscillatorsmentioning

confidence: 99%

Review of GaN-based devices for terahertz operation

Ahi

2017

Opt. Eng

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Abstract. GaN provides the highest electron saturation velocity, breakdown voltage, operation temperature, and thus the highest combined frequency-power performance among commonly used semiconductors. The industrial need for compact, economical, high-resolution, and high-power terahertz (THz) imaging and spectroscopy systems are promoting the utilization of GaN for implementing the next generation of THz systems. As it is reviewed, the mentioned characteristics of GaN together with its capabilities of providing high two-dimensional election densities and large longitudinal optical phonon of ∼90 meV make it one of the most promising semiconductor materials for the future of the THz emitters, detectors, mixers, and frequency multiplicators. GaNbased devices have shown capabilities of operation in the upper THz frequency band of 5 to 12 THz with relatively high photon densities in room temperature. As a result, THz imaging and spectroscopy systems with high resolution and deep depth of penetration can be realized through utilizing GaN-based devices. A comprehensive review of the history and the state of the art of GaN-based electronic devices, including plasma heterostructure field-effect transistors, negative differential resistances, hetero-dimensional Schottky diodes, impact avalanche transit times, quantum-cascade lasers, high electron mobility transistors, Gunn diodes, and tera field-effect transistors together with their impact on the future of THz imaging and spectroscopy systems is provided.

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Bandstructure effect on high-field transport in GaN and GaAlN

Cited by 53 publications

References 11 publications

Computational Materials Science, an Increasingly Reliable Engineering Tool: Anomalous Nitride Band Structures and Device Consequences

Computational Materials Science, an Increasingly Reliable Engineering Tool: Anomalous Nitride Band Structures and Device Consequences

A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review

Review of GaN-based devices for terahertz operation

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