Bandgap voltage references with 1V supply

Ivanov, Vadim; Sanborn, K.; Filanovsky, I.M.

doi:10.1109/esscir.2006.307593

Cited by 8 publications

(5 citation statements)

References 4 publications

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“…The total 3 deviation equals 13.5 mV. The PSRR performance is higher than the PSRR reported in [7,10,16,17,19] and lower than the PSRR reported in [20,21].…”

Section: Implementation and Post-layout Simulation Resultsmentioning

confidence: 52%

“…The presented sub‐1V supply CMOS voltage reference generator operates in the widest temperature range of − 40 to 125 ∘ C achieving a TC of 23.66ppm/ ∘ C. The same wide temperature range is achieved by the proposed bandgap circuit presented in 12 with a smaller TC, yet it operates at a higher nominal supply voltage of 3 V and it consumes higher area. Furthermore, as it can be seen in Table III, the sub‐1V bandgap references reported in 20, 21 achieve better overall performance in the temperature range of − 40 to 125 ∘ C at the expense of higher die area. The absolute total reference voltage variation over process corners in 9 equals to ± 8.5%, whereas the circuit presented in this paper exhibits a total absolute variation of ± 3.3% in a much wider temperature range.…”

Section: Implementation and Post‐layout Simulation Resultsmentioning

confidence: 93%

“…Moreover, in the latter technique the total resistance of the circuit resistors exceeds 1 M Ω. In 20, 21, sub‐1V accurate BGR circuits are reported with very good performance in the range of − 40 to 125 ∘ C, nevertheless their die area is not positioned among the lowest reported in the literature. In the latter, the reverse bandgap principle is employed, which was initially proposed by R. Widlar in 1978.…”

Section: Circuit Designmentioning

confidence: 99%

“…In [6][7][8][9][10], MOSFET devices are biased in weak inversion in a variety of circuits' configurations such that PTAT and CTAT signals are generated via their gate-source voltage targeting at a stable reference voltage over temperature. In addition to the above mentioned [3][4][5][6][7][8][9][10], several other voltage reference generators [11][12][13][14][15][16][17][18][19][20][21] have been reported in the past, which however due to their limited temperature range of operation, limited stability and requirement for large area or for higher than 0.9 V minimum supply voltage are not fully suitable for sub-1V, wide temperature range applications where the supply voltage varies between 0.9 V and higher than 1 V voltages.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

A sub‐1V supply CMOS voltage reference generator

Τσίτουρας¹,

Plessas²,

Birbas³

et al. 2011

Circuit Theory & Apps

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SUMMARYAn integrated sub-1V voltage reference generator, designed in standard 90-nm CMOS technology, is presented in this paper. The proposed voltage reference circuit consists of a conventional bandgap core based on the use of p-n-p substrate vertical bipolar devices and a voltage-to-current converter. The former produces a current with a positive temperature coefficient (TC), whereas the latter translates the emitterbase voltage of the core p-n-p bipolar device to a current with a negative TC. The circuit includes two operational amplifiers with a rail-to-rail output stage for enabling stable and robust operation overall process and supply voltage variations while it employs a total resistance of less than 600 K . Detailed analysis is presented to demonstrate that the proposed circuit technique enables die area reduction. The presented voltage reference generator exhibits a PSRR of 52.78 dB and a TC of 23.66 ppm/ • C in the range of −40 and 125 • C at the typical corner case at 1 V. The output reference voltage of 510 mV achieves a total absolute variation of ±3.3% overall process and supply voltage variations and a total standard deviation, , of 4.5 mV, respectively, in the temperature range of −36 and 125 • C.

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“…The total 3 deviation equals 13.5 mV. The PSRR performance is higher than the PSRR reported in [7,10,16,17,19] and lower than the PSRR reported in [20,21].…”

Section: Implementation and Post-layout Simulation Resultsmentioning

confidence: 52%

Section: Implementation and Post‐layout Simulation Resultsmentioning

confidence: 93%

Section: Circuit Designmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A sub‐1V supply CMOS voltage reference generator

Τσίτουρας¹,

Plessas²,

Birbas³

et al. 2011

Circuit Theory & Apps

View full text Add to dashboard Cite

show abstract

“…Some of the voltage reference cells are available in standard CMOS processes which consume high power (e.g. [85,86,87,88,89,90,91,92,93,94,95,96,97,98,99,100,101,102,103,104,99,105,106,107]). Line regulation is another important parameter.…”

Section: A1 the Proposed Circuitmentioning

confidence: 99%

Integrated Circuits for Programming Flash Memories in Portable Applications

Navidi¹

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Smart devices such as smart grids, smart home devices, etc. are infrastructure systems that connect the world around us more than before. These devices can communicate with each other and help us manage our environment. This concept is called the Internet of Things (IoT). Not many smart nodes exist that are both low-power and programmable. Floating-gate (FG) transistors could be used to create adaptive sensor nodes by providing programmable bias currents. FG transistors are mostly used in digital applications like Flash memories. However, FG transistors can be used in analog applications, too. Unfortunately, due to the expensive infrastructure required for programming these transistors, they have not been economical to be used in portable applications. In this work, we present low-power approaches to programming FG transistors which make them a good candidate to be employed in future wireless sensor nodes and portable systems. First, we focus on the design of low-power circuits which can be used in programming the FG transistors such as highvoltage charge pumps, low-drop-out regulators, and voltage reference cells. Then, to achieve the goal of reducing the power consumption in programmable sensor nodes and reducing the programming infrastructure, we present a method to program FG transistors using negative voltages. We also present charge-pump structures to generate the necessary negative voltages for programming in this new configuration.

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Bipolar and Junction Field-Effect Transistors

El-Kareh¹,

Hutter²

2015

Silicon Analog Components

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Bandgap voltage references with 1V supply

Cited by 8 publications

References 4 publications

A sub‐1V supply CMOS voltage reference generator

A sub‐1V supply CMOS voltage reference generator

Integrated Circuits for Programming Flash Memories in Portable Applications

Bipolar and Junction Field-Effect Transistors

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