Bandgap tuning and spectroscopy analysis of In<sub>x</sub>Ga<sub>(1−x)</sub>N thin films grown by RF sputtering method

Jakkala, Pratheesh; Kordesch, Martin E.

doi:10.1088/2053-1591/aa5111

Cited by 9 publications

(6 citation statements)

References 25 publications

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“…From the literature, the optical bandgap energy of film caused by indium leads to the shrinkage of the bandgap value (Özen et al , 2016). As summarized in Table 4, the optical bandgap values were comparable with other literature (Jakkala and Kordesch, 2017).…”

Section: Resultssupporting

confidence: 88%

Effects of indium composition on the surface morphological and optical properties of InGaN/GaN heterostructures

Hamzah

Sahar²,

Tan³

et al. 2022

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Purpose This study aims to investigate the effects of indium composition on surface morphology and optical properties of indium gallium nitride on gallium nitride (InGaN/GaN) heterostructures. Design/methodology/approach The InGaN/GaN heterostructures were grown on flat sapphire substrates using a metal-organic chemical vapour deposition reactor with a trimethylindium flow rate of 368 sccm. The indium composition of the InGaN epilayers was controlled by applying different substrate temperatures. The surface morphology and topography were observed using field emission scanning electron microscope (F.E.I. Nova NanoSEM 450) and atomic force microscopy (Bruker Dimension Edge) with a scanning area of 10 µm × 10 µm, respectively. The compositional analysis was done by Energy Dispersive X-Ray Analysis. Finally, the ultraviolet-visible (UV-Vis) spectrophotometer (Agilent Technology Cary Series UV-Vis-near-infrared spectrometer) was measured from 200 nm to 1500 nm to investigate the optical properties of the samples. Findings The InGaN/GaN thin films have been successfully grown at three different substrate temperatures. The indium composition reduced as the temperature increased. At 760 C, the highest indium composition was obtained, 21.17%. This result was acquired from the simulation fitting of ω−2θ scan on (0002) plane using LEPTOS software by Bruker D8 Discover. The InGaN/GaN shows significantly different surface morphologies and topographies as the indium composition increases. The thickness of InGaN epilayers of the structure was ∼300 nm estimated from the field emission scanning electron microscopy. The energy bandgap of the InGaN was 2.54 eV – 2.79 eV measured by UV-Vis measurements. Originality/value It can be seen from this work that changes in substrate temperature can affect the indium composition. From all the results obtained, this work can be helpful towards efficiency improvement in solar cell applications.

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Section: Resultssupporting

confidence: 88%

Effects of indium composition on the surface morphological and optical properties of InGaN/GaN heterostructures

Hamzah

Sahar²,

Tan³

et al. 2022

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“…From the transmittance spectra, the optical bandgap of the grown structure can be calculated by using the following Tauc expression (Jakkala and Kordesch, 2017): where a , hv , A , E g and n are absorption coefficient, Planck’s equation (photon energy), a constant value that depends on transition probability, optical energy gap and a value that depend on the nature transition of electron (direct allowed semiconductor; n = 1/2), respectively. The absorption coefficient of the structure can be calculated by using the following Beer–Lambert law relation (Yusof et al , 2018): where T , I i , I e , a and d are transmittance, incident light, transmitted light, absorption coefficient and thickness of the structure, respectively.…”

Section: Resultsmentioning

confidence: 99%

The role of growth temperature on the indium incorporation process for the MOCVD growth of InGaN/GaN heterostructures

Yusof

Hassan

Hamady

et al. 2021

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Purpose The purpose of this paper is to investigate the effect of growth temperature on the evolution of indium incorporation and the growth process of InGaN/GaN heterostructures. Design/methodology/approach To examine this effect, the InGaN/GaN heterostructures were grown using Taiyo Nippon Sanso Corporation metal-organic chemical vapor deposition (MOCVD) SR4000-HT system. The InGaN/GaN heterostructures were epitaxially grown on 3.4 µm undoped-GaN (ud-GaN) and GaN nucleation layer, respectively, over a commercial 2” c-plane flat sapphire substrate. The InGaN layers were grown at different temperature settings ranging from 860°C to 820°C in a step of 20°C. The details of structural, surface morphology and optical properties were investigated using X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), atomic force microscopy and ultraviolet-visible (UV-Vis) spectrophotometer, respectively. Findings InGaN/GaN heterostructure with indium composition up to 10.9% has been successfully grown using the MOCVD technique without any phase separation detected within the sensitivity of the instrument. Indium compositions were estimated through simulation fitting of the XRD curve and calculation of Vegard’s law from UV-Vis measurement. The thickness of the structures was determined using the Swanepoel method and the FE-SEM cross-section image. Originality/value This paper report on the effect of MOCVD growth temperature on the growth process of InGaN/GaN heterostructure, which is of interest in solid-state lighting technology, especially in light-emitting diodes and solar cell application.

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“…where α is the absorption coefficient, h is Planck's constant, ν is the photon frequency, E g is the band-gap energy, and A is a proportionality constant. 39 Since ZnS-based semiconductors are well known to exhibit a direct allowed transition, a value of n = 0.5 was used. Notably, the Tauc model is based on the fact that absorbed photons induce electronic transitions from the valence band to conduction bands 35−37 and implies that photons with energies lower than that of the band gap are not absorbed (i.e., the irradiated material is transparent to such light), whereas the absorption of light with near-band-gap photon energy gets stronger.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…Given that this study primarily aimed to develop a PD with a novel structure and sensory mechanism, we tried to measure the band-gap energy of the ZnS/Cu-particle-containing composite film. In doing so, we employed the Tauc band-gap determination method, − which assumes that the optical absorption of a material depends on the difference between the photon energy and the band gap as follows where α is the absorption coefficient, h is Planck’s constant, ν is the photon frequency, E g is the band-gap energy, and A is a proportionality constant . Since ZnS-based semiconductors are well known to exhibit a direct allowed transition, a value of n = 0.5 was used.…”

Section: Resultsmentioning

confidence: 99%

Fabrication and Characterization of a Capacitive Photodetector Comprising a ZnS/Cu Particle/Poly(vinyl butyral) Composite

Jun

Choi

Han

et al. 2019

ACS Appl. Mater. Interfaces

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Most photodetectors developed to date essentially measure photocurrents induced by the generation and separation of electron−hole pairs in semiconductors during irradiation. Although the above light detection method is well established, highly sensitive, and applicable to a broad range of semiconductor materials, it requires the presence of a stable and direct contact between the semiconductor and the electrode for accurate photocurrent measurements. In turn, this prerequisite necessitates the use of various costly processes for device fabrication (e.g., photolithography and vacuum deposition of semiconductors/metals) and complicates the development of flexible devices. Herein, inspired by the fact that the dielectric properties of certain materials can be changed by light irradiation, we dispersed ZnS/Cu semiconducting particles in poly(vinyl butyral) to prepare a free-standing composite film and formed two layers of Ag nanowire electrodes on both sides of the cured composite to fabricate a photodetector of a completely new type. The developed device exhibited a capacitance very sensitive to irradiation with light of a specific wavelength and additionally featured the advantages of simple structure/operation mechanism, mechanical flexibility, and transparency, not showing any signs of performance deterioration even after severe damage.

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Bandgap tuning and spectroscopy analysis of In_xGa_(1−x)N thin films grown by RF sputtering method

Cited by 9 publications

References 25 publications

Effects of indium composition on the surface morphological and optical properties of InGaN/GaN heterostructures

Effects of indium composition on the surface morphological and optical properties of InGaN/GaN heterostructures

The role of growth temperature on the indium incorporation process for the MOCVD growth of InGaN/GaN heterostructures

Fabrication and Characterization of a Capacitive Photodetector Comprising a ZnS/Cu Particle/Poly(vinyl butyral) Composite

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Bandgap tuning and spectroscopy analysis of InxGa(1−x)N thin films grown by RF sputtering method

Cited by 9 publications

References 25 publications

Effects of indium composition on the surface morphological and optical properties of InGaN/GaN heterostructures

Effects of indium composition on the surface morphological and optical properties of InGaN/GaN heterostructures

The role of growth temperature on the indium incorporation process for the MOCVD growth of InGaN/GaN heterostructures

Fabrication and Characterization of a Capacitive Photodetector Comprising a ZnS/Cu Particle/Poly(vinyl butyral) Composite

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Bandgap tuning and spectroscopy analysis of In_xGa_(1−x)N thin films grown by RF sputtering method