As a compound in between the tantalum oxide and nitride, the tantalum oxynitride TaON is expected to combine their advantages and act as an efficient visible-light-driven photocatalyst. In this letter, using hybrid functional calculations we show that TaON has different defect properties from the binary tantalum oxide and nitride: (i) instead of O or N vacancies or Ta interstitials, the ON antisite is the dominant defect, which determines its intrinsic n-type conductivity and the p-type doping difficulty; (ii) the ON antisite has a shallower donor level than O or N vacancies, with a delocalized distribution composed mainly of the Ta 5d orbitals, which gives rise to better electronic conductivity in the oxynitride than in the oxide and nitride. The phase stability analysis reveals that the easy oxidation of TaON is inevitable under O rich conditions, and a relatively O poor condition is required to synthesize stoichiometric TaON samples. The splitting of water into H 2 and O 2 using semiconductor photocatalysts has been considered as a clean and renewable way to utilize solar energy. One key issue for realizing this application is to search for suitable photoelectrode semiconductors which can absorb visible light. [1][2][3] Owing to their good chemical stability in aqueous solution, transition metal oxides are the subject of most previous studies.[2, 4] However, transition metal oxides usually have large band gaps (≥ 3 eV), limiting the absorption of visible light and setting an upper limit on the energy conversion efficiency at ∼2%. [2,4] In contrast, the transition metal nitrides have smaller band gaps due to N 2p orbitals being shallower than O 2p orbitals, but the easy oxidation of nitrides in aqueous solution makes them degraded quickly. Being in between the oxides and nitrides, the oxynitrides are believed to have intermediate properties, such as smaller band gaps than oxides and better stability than the nitrides.[2, 4, 5] A well known example, tantalum oxynitride TaON, which has a band gap around 2.5 eV, between those of Ta 2 O 5 (3.9 eV) and Ta 3 N 5 (2