Bandgap optimization of lattice matched triple junction solar cells by incorporation of InAs quantum dots

Richards, B. C.; Lin, Yong; Pate, Pravin; Chumney, D.; Sharps, Paul; Kerestes, Christopher; Forbes, David V.; Driscoll, Kristina; Podell, Adam; Hubbard, Seth M.

doi:10.1109/pvsc.2012.6318173

Cited by 5 publications

(4 citation statements)

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“…Improvements in device growth processes and overall strain management have dramatically reduced the voltage penalty and increased the overall benefit. Recently, a QD enhanced triple junction solar cell was demonstrated that showed an overall efficiency improvement of 0.2% (absolute) . This encouraging early result suggests efficiencies of >30% AM0 may be possible for quantum enhanced Ge-based triple junction devices.…”

Section: Lattice Matched Alternatives To Achieve High Efficiencymentioning

confidence: 90%

“…Several researchers have proposed and demonstrated the benefit of using nanoenhancements (quantum wells (QW) or quantum dots (QD)) to address the current mismatch in the conventional GaInP/GaAs/Ge triple junction solar cell. − These approaches have focused on boosting the current from the GaAs-based middle junction, thereby allowing the top InGaP cell to be grown optically thick and increasing the overall device current. Early efforts in integrating quantum structures within GaAs cells demonstrated modest current enhancements, but significant voltage losses.…”

Section: Lattice Matched Alternatives To Achieve High Efficiencymentioning

confidence: 99%

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High Efficiency Multijunction Photovoltaic Development

Wilt

Stan

2012

Ind. Eng. Chem. Res.

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Photovoltaic energy conversion has demonstrated remarkable improvements in performance over the past 60 years. The rate of solar cell efficiency change has actually increased over the past 20 years as researchers have moved beyond elemental semiconductors to increasingly more sophisticated materials and devices. In addition, significant improvements in materials quality and deposition technology have further fueled this dramatic improvement in device performance. Diversifying from silicon to III−V compound semiconductor materials has enabled the development of multijunction solar cells with 3, 4, and even 6 subcells to achieve ever higher conversion efficiency. For 1-sun space application(s), these III−V multijunction cells are demonstrating ∼35% efficiency, while under terrestrial concentrated sunlight conditions efficiencies are >42%. This Article will discuss the development of high efficiency III−V multijunction solar cells, focusing on recently developed metamorphic device structures and novel lattice matched approaches.

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Section: Lattice Matched Alternatives To Achieve High Efficiencymentioning

confidence: 90%

Section: Lattice Matched Alternatives To Achieve High Efficiencymentioning

confidence: 99%

High Efficiency Multijunction Photovoltaic Development

Wilt

Stan

2012

Ind. Eng. Chem. Res.

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“…The absorption of sub-bandgap photons and the possibility of minimal degradation of the open circuit voltage in comparison with single junction GaAs solar cells have been reported. [15][16][17] The absorption energies for the InAs/GaAs system are, in principle,…”

Section: A Theoretical Modelmentioning

confidence: 99%

InAs quantum dot growth on AlxGa1−xAs by metalorganic vapor phase epitaxy for intermediate band solar cells

Jakomin

Kawabata

Mourão

et al. 2014

Journal of Applied Physics

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“…Quality of InGaP material can be affected by surface morphology and strain [19‐21], both of which change because of the incorporation of QDs. Further minimization in strain and elimination of coalescence in the QD layers should decrease the voltage loss in the InGaP and (In)GaAs junctions, which would lead to not only improve efficiency but also even greater uniformity of performance.…”

Section: Quantum Dot Triple‐junction Solar Cellsmentioning

confidence: 99%

Fabrication and analysis of multijunction solar cells with a quantum dot (In)GaAs junction

Kerestes

Polly

Forbes

et al. 2013

Progress in Photovoltaics

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InAs quantum dots (QDs) have been incorporated to bandgap engineer the (In)GaAs junction of (In)GaAs/Ge double‐junction solar cells and InGaP/(In)GaAs/Ge triple‐junction solar cells on 4‐in. wafers. One sun AM0 current–voltage measurement shows consistent performance across the wafer. Quantum efficiency analysis shows similar aforementioned bandgap performance of baseline and QD solar cells, whereas integrated sub‐band gap current of 10 InAs QD layers shows a gain of 0.20 mA/cm2. Comparing QD double‐junction solar cells and QD triple‐junction solar cells to baseline structures shows that the (In)GaAs junction has a Voc loss of 50 mV and the InGaP 70 mV. Transmission electron microscopy imaging does not reveal defective material and shows a buried QD density of 1011 cm−2, which is consistent with the density of QDs measured on the surface of a test structure. Although slightly lower in efficiency, the QD solar cells have uniform performance across 4‐in. wafers. Copyright © 2013 John Wiley & Sons, Ltd.

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Bandgap optimization of lattice matched triple junction solar cells by incorporation of InAs quantum dots

Cited by 5 publications

References 1 publication

High Efficiency Multijunction Photovoltaic Development

High Efficiency Multijunction Photovoltaic Development

InAs quantum dot growth on AlxGa1−xAs by metalorganic vapor phase epitaxy for intermediate band solar cells

Fabrication and analysis of multijunction solar cells with a quantum dot (In)GaAs junction

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