Bandgap nanoengineering of graphene tunnel diodes and tunnel transistors to control the negative differential resistance

Nguyễn, Việt Hùng; Saint-Martin, Jérôme; Querlioz, Damien; Mazzamuto, Fulvio; Bournel, A.; Niquet, Yann-Michel; Dollfus, Philippe

doi:10.1007/s10825-013-0434-2

Cited by 32 publications

(39 citation statements)

References 33 publications

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“…These devices offer better properties that conventional twoterminal NDR devices such as independence of quantum tunnelling and the gate electrode can be used to control the current density and the output power of the AC oscillation [37]. Moreover, tunnel diodes and tunnelling FETs can be developed using graphene with the effect of negative differential resistance to design high-performance devices for either analogue or digital applications [39]. These devices exploit the peak current and the peak-to-valley ratio which are strongly enhanced and weakly sensitive to the length fluctuations of the transition region, owing to the graphene working as the active material.…”

Section: Electrical Properties Of the Graphene And Basic Devicesmentioning

confidence: 99%

State-of-the-Art Electronic Devices Based on Graphene

Vargas-Bernal¹

2016

Nanoelectronics and Materials Development

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Graphene can be considered as the material used for electronic devices of this century, due to its excellent physical and chemical properties, which have been studied and implemented from a theoretical basis and have allowed the development of unique and innovative applications. The need for an ongoing study of the state-of-the-art electronic devices is ultimately useful for the progress achieved so far and future project applications. To date, graphene has been used individually in composite, hybrid materials or functional materials. In this chapter, an overview of their applications in nanoelectronics, particularly with an emphasis directed to flexible electronics, is presented. The description of the advantages and properties of graphene at a level of materials science and engineering is presented, in order to spread its enormous potential. In addition, the future prospects of these applications arising from the developments made currently in the laboratory phase are examined.

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Section: Electrical Properties Of the Graphene And Basic Devicesmentioning

confidence: 99%

State-of-the-Art Electronic Devices Based on Graphene

Vargas-Bernal¹

2016

Nanoelectronics and Materials Development

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“…These are positioned between two graphene sheets which then constitute the electrodes (cf. As such, there is no need for a well-defined band gap in graphene [111][112][113]. 19).…”

Section: Vertical Designmentioning

confidence: 99%

“…Fig. This has the added benefit of greatly reducing any current leakage whilst in the OFF state [111][112][113]. The key point here, is that the insulating layers act as a barrier, and thus preventing the flow of current.…”

Section: Vertical Designmentioning

confidence: 99%

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Applied Spectroscopy and the Science of Nanomaterials

Misra¹

2015

Progress in Optical Science and Photonics

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“…1. Our calculations were based on the nonequilibrium Green's function (NEGF) method [9] and the analysis of the bandstructure.…”

Section: Modelmentioning

confidence: 99%

Conduction gap of strained/unstrained graphene junctions: Direction dependence

Nguyen¹,

Nguyễn²,

Dollfus³

et al. 2014

2014 International Workshop on Computational Electronics (IWCE)

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Though the energy bandgap of strained graphene remains zero, the shift of Dirac points in the k-space due to strain-induced deformation of graphene lattice can lead to the appearance of a finite conduction gap of several hundreds meV in strained/unstrained junctions with a strain of only a few percent. This conduction gap strongly depends on the direction of applied strain and the transport direction. Here, we study its properties with respect to these quantities. This work provides useful information for further exploiting graphene strained junctions in electronic applications.

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Bandgap nanoengineering of graphene tunnel diodes and tunnel transistors to control the negative differential resistance

Cited by 32 publications

References 33 publications

State-of-the-Art Electronic Devices Based on Graphene

State-of-the-Art Electronic Devices Based on Graphene

Applied Spectroscopy and the Science of Nanomaterials

Conduction gap of strained/unstrained graphene junctions: Direction dependence

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