Bandgap and transport properties of Si/sub 1-x/Ge/sub x/ by analysis of nearly ideal Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors

King, C. A.; Hoyt, Judy L.; Gibbons, J. F.

doi:10.1109/16.40925

Cited by 164 publications

(34 citation statements)

References 30 publications

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“…This will be strongly influenced by the state of the Si interface surface. 12 of tunneling currents. The tunneling currents value is the same for both calculation and experimental only when V BE is below 0.6 V. The deviation is assumed to be caused by negligence on the depletion region at emitter-base boundary 13 .…”

Section: Resultsmentioning

confidence: 99%

Effect of Si interface surface roughness to the tunneling current of the Si/Si1-xGex/Si heterojunction bipolar transistor

Hasanah¹,

Suhendi²,

Tayubi³

et al. 2016

AIP Conference Proceedings

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Section: Resultsmentioning

confidence: 99%

Effect of Si interface surface roughness to the tunneling current of the Si/Si1-xGex/Si heterojunction bipolar transistor

Hasanah¹,

Suhendi²,

Tayubi³

et al. 2016

AIP Conference Proceedings

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“…Wafers of Si/Ge Si /Si npn HBT material were grown by rapid thermal chemical vapor deposition [9] on n -Si substrates, with the following structural parameters: a 1.1-m thick n-Si subcollector region doped cm , a 300Å p -Ge Si base doped cm except for unintentionally doped 40Å spacers on both sides, and a 0.2-m thick n -Si emitter layer doped cm . We fabricated large-area double-emitter HBT test structures, illustrated in the inset of Fig.…”

Section: Methodsmentioning

confidence: 99%

Multi-emitter Si/Ge_xSi/sub 1-x/ heterojunction bipolar transistor with no base contact and enhanced logic functionality

Zaslavsky

Luryi²,

King³

et al. 1997

IEEE Electron Device Lett.

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We demonstrate multi-emitter Si/Ge x Si 10x npn heterojunction bipolar transistors (HBT's) which require no base contact for transistor operation. The base current is supplied by the additional emitter contact under reverse bias due to the heavy doping of the emitter-base junction. Large-area HBT test structures exhibit good transistor characteristics, with current gain 400 regardless of whether the base current is supplied by a test base electrode or one of the emitter contacts. These devices have enhanced logic functionality because of emitter contact symmetry. Since device fabrication does not require base electrode formation, the number of processing steps can be reduced without significant penalty to HBT performance.

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“…Band-offset values (⌬E v ,⌬E c ) measured experimentally or estimated theoretically are also shown for comparison. [19][20][21] It is seen that the Schottky barrier height does not change with Ge fraction and strain in the n-type Si 1Ϫx Ge x strained layers. The barrier height difference is almost zero or below 30 meV for n-type samples.…”

mentioning

confidence: 91%

Correlation between barrier height and band offsets in metal/Si1−xGex/Si heterostructures

Nur

Karlsteen

Willander

et al. 1998

Applied Physics Letters

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The variation of barrier height with the band gap in the metal/heterojunction systems is related to how the Fermi level position varies with respect to band edges. If the Fermi level is pinned by the interface states its movement will also correspond to the movement of the neutrality level at the interface. Metal/Si1−xGex/Si heterostructures (0⩽x⩽0.24) for both n- and p-type substrates were studied to understand the relation between Schottky barrier, Fermi level movement, and the band gap variations. It was shown that a correlation exists between Schottky barrier height variation and band-offset values ΔEc and ΔEv. For n-type substrate, measured barrier height differences are almost the same as the band offsets in the conduction band ΔEc. For p-type substrates they were found to be slightly smaller than ΔEv. This shows that Fermi level position relative to the conduction band edge does not change with band gap variation.

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Bandgap and transport properties of Si/sub 1-x/Ge/sub x/ by analysis of nearly ideal Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors

Cited by 164 publications

References 30 publications

Effect of Si interface surface roughness to the tunneling current of the Si/Si1-xGex/Si heterojunction bipolar transistor

Effect of Si interface surface roughness to the tunneling current of the Si/Si1-xGex/Si heterojunction bipolar transistor

Multi-emitter Si/Ge_xSi/sub 1-x/ heterojunction bipolar transistor with no base contact and enhanced logic functionality

Correlation between barrier height and band offsets in metal/Si1−xGex/Si heterostructures

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Bandgap and transport properties of Si/sub 1-x/Ge/sub x/ by analysis of nearly ideal Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors

Cited by 164 publications

References 30 publications

Effect of Si interface surface roughness to the tunneling current of the Si/Si1-xGex/Si heterojunction bipolar transistor

Effect of Si interface surface roughness to the tunneling current of the Si/Si1-xGex/Si heterojunction bipolar transistor

Multi-emitter Si/GexSi/sub 1-x/ heterojunction bipolar transistor with no base contact and enhanced logic functionality

Correlation between barrier height and band offsets in metal/Si1−xGex/Si heterostructures

Contact Info

Product

Resources

About

Multi-emitter Si/Ge_xSi/sub 1-x/ heterojunction bipolar transistor with no base contact and enhanced logic functionality