2019
DOI: 10.1063/1.5115280
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Band structure tailoring in ZrSe2 single crystal via trace rhenium intercalation

Abstract: Atomic intercalation can be utilized to engineer the electronic structure of two dimensional layered materials at the atomic scale, thereby governing distinctive properties in comparison with the pristine ones. Herein, a minute amount of Rhenium (Re) atoms (∼1.3% wt.) were controllably intercalated inside the layers of semiconducting Zirconium diselenide (ZrSe2) single crystal. Our angle-resolved photoemission spectroscopy revealed that Re intercalation could move down the bottom of the ZrSe2 conduction band w… Show more

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Cited by 8 publications
(8 citation statements)
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“…12b(iv). Zia et al also demonstrated the use of ARPES to study the phase transition of 2D material from semiconducting to a metallic characteristics 411 .…”
Section: Xas Study On Phase Engineering In 2d Materialsmentioning
confidence: 99%
“…12b(iv). Zia et al also demonstrated the use of ARPES to study the phase transition of 2D material from semiconducting to a metallic characteristics 411 .…”
Section: Xas Study On Phase Engineering In 2d Materialsmentioning
confidence: 99%
“…Intercalation of trace amount of Re (about 1.3% wt.) inside the layers of pure ZrSe 2 has resulted in metallic behaviour of the sample [14]. Another theoretical study has shown that structural defects in the pristine ZrSe 2 crystals can change its magnetic and electronic properties including metallic behaviour [36].…”
Section: Methodsmentioning
confidence: 99%
“…Beside these, controlling layer numbers, presence of impurities etc. can tune electronic properties of TMDs significantly [13][14][15][16][17].…”
Section: Introductionmentioning
confidence: 99%
“…However, not all metal atom insertions lead to band dispersion changes in TMDs. For instance, we controllably inserted trace amounts of rhenium (Re) atoms into single crystal layers of the semiconductor ZrSe 2 . ARPES results revealed that Re intercalation could move down the bottom of the conduction band of ZrSe 2 without band dispersion change and form a small electron pocket at the Brillouin zone boundary at the M point.…”
Section: Structural Intercalation-related Phase Engineering In 2d Nan...mentioning
confidence: 99%