Band-structure tailoring by electric field in a weakly coupled electron-hole system

Naveh, Y.; Laikhtman, B.

doi:10.1063/1.113297

Cited by 72 publications

(78 citation statements)

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“…We have mentioned that our BGQW system was studied earlier with a simple two-band model 26 , where only the H1 and the E1 levels are included. Therefore, in Ref.…”

Section: Electronic Structurementioning

confidence: 99%

“…The x axis is along [100] and the y axis is along [010]. This system was studied earlier with a simple two band model 26 . The essential feature of our model is the existence in BGQW quantized conduction band states in the InAs layer, and hybridized quantum levels in the energy regime where the GaSb valence band overlaps with the InAs conduction band.…”

Section: Model and Theorymentioning

confidence: 99%

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Optical transitions in broken gap heterostructures

Halvorsen¹,

Galperin

Chao

2000

Phys. Rev. B

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We have used an eight band model to investigate the electronic structures and to calculate the optical matrix elements of InAs-GaSb broken gap semiconductor heterostructures. The unusual hybridization of the conduction band states in InAs layers with the valence band states in GaSb layers has been analyzed in details. We have studied the dependence of optical matrix elements on the degree of conductionvalence hybridization, the tuning of hybridization by varying the width of the GaSb layers and/or InAs layers, and the sensitivity of quantized levels to this tuning. Large spin-orbit splitting in energy bands has been demonstrated. Our calculation can serve as a theoretical modeling for infrared lasers based on broken gap quantum well heterostructures. 73.20.Dx, 78.40.Fy,

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“…We have mentioned that our BGQW system was studied earlier with a simple two-band model 26 , where only the H1 and the E1 levels are included. Therefore, in Ref.…”

Section: Electronic Structurementioning

confidence: 99%

Section: Model and Theorymentioning

confidence: 99%

Optical transitions in broken gap heterostructures

Halvorsen¹,

Galperin

Chao

2000

Phys. Rev. B

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“…In the past decades, the properties of InAs/GaSb broken-gap supperlattices and quantum wells (QWs) were investigated both theocratically and experimentally 3,4,5,6,7,8,9,10,11,12,13,14 . These studies show that due to the overlap of InAs conduction band and GaSb valence band, the energy dispersion may exhibits an anticrossing behavior at a finite in-plane wave vector k 0 3,4,5,6,7,8,9,10 . The tunneling between InAs and GaSb layers opens a mini hybridization gap, which was observed experimentally 11,12,13,14 .…”

Section: Introductionmentioning

confidence: 99%

Spin states in InAs/AlSb/GaSb semiconductor quantum wells

Yang

Chang

2009

Phys. Rev. B

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We investigate theoretically the spin states in InAs/AlSb/GaSb broken-gap quantum wells by solving the Kane model and the Poisson equation self-consistently. The spin states in InAs/AlSb/GaSb quantum wells are quite different from those obtained by the single-band Rashba model due to the electron-hole hybridization. The Rashba spin-splitting of the lowest conduction subband shows an oscillating behavior. The D'yakonov-Perel' spin relaxation time shows several peaks with increasing the Fermi wavevector. By inserting an AlSb barrier between the InAs and GaSb layers, the hybridization can be greatly reduced. Consequently, the spin orientation, the spin splitting, and the D'yakonov-Perel' spin relaxation time can be tuned significantly by changing the thickness of the AlSb barrier.

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“…A QW for electrons in InAs and a QW for holes in GaSb coexist next to each other. If the QWs thicknesses are small enough, a hybridization gap is expected to open at the charge neutrality point (CNP) [2,3]. Depending on the QWs' thicknesses and on the perpendicular electric field, a rich phase diagram is predicted [4].…”

mentioning

confidence: 99%

Insulating State and Giant Nonlocal Response in anInAs/GaSbQuantum Well in the Quantum Hall Regime

et al. 2014

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We present transport measurements performed in InAs/GaSb double quantum wells. At the electron-hole crossover tuned by a gate voltage, a strong increase in the longitudinal resistivity is observed with increasing perpendicular magnetic field. Concomitantly with a local resistance exceeding the resistance quantum by an order of magnitude, we find a pronounced non-local resistance signal of almost similar magnitude. The co-existence of these two effects is reconciled in a model of counter-propagating and dissipative quantum Hall edge channels providing backscattering, shorted by a residual bulk conductivity.An InAs/GaSb double quantum well (QW) sandwiched between two AlSb barriers shows a peculiar band alignment [1]. A QW for electrons in InAs and a QW for holes in GaSb coexist next to each other. If the QWs thicknesses are small enough, a hybridization gap is expected to open at the charge neutrality point (CNP) [2,3]. Depending on the QWs' thicknesses and on the perpendicular electric field, a rich phase diagram is predicted [4]. It should be possible to electrically tune the sample from standard conducting phases to insulating, semimetallic or topological insulator phases. Recent work on InAs/GaSb QWs showed signatures of topological phases in micron-sized Hall bars at zero magnetic field [5][6][7], as expected for the quantum spin Hall insulator regime [8]. Beyond the topological insulator properties, that manifest themselves, the fate of topological edge states at finite magnetic field has not been investigated so far. Similarly to other semi-metals like graphene [9,10] or CdHgTe/HgTe quantum wells [11,12], electron and hole Landau levels (LLs) can coexist close to the CNP [13,14]. A detailed understanding of the expected hybridization of LLs [15] and its manifestation in a transport experiment is still missing.Here we present magnetotransport measurements performed on gated InAs/GaSb double QWs. At high magnetic fields, in the electron and hole regimes, we observe the formation of standard LLs. Close to the CNP a peculiar state forms in which electrical transport is governed by counter-propagating edge channels of highly dissipative nature. We investigate the transport properties in this regime using different measurement configurations, and as a function of magnetic field and temperature.The experiments were performed on two devices (named device A and device B) obtained from the same wafer as described in Ref. 16. In Ref. 17 a nominally identical structure was used, and a hybridization gap of 3.6 meV was reported. Hall bar structures were fabricated by photolithography and argon plasma etching. Device A consisted of a single Hall bar with a width of 25 µm and a separation between lateral arms of 50 µm.Device B consisted of two Hall bars in series, oriented perpendicularly to each other. Their width is 25 µm and the lateral voltage probes have various separations, the shortest being 50 µm . Device A was covered by a 200 nm thick Si 3 N 4 insulating layer, device B by a 40 nm thick HfO 2 layer. On both sampl...

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Band-structure tailoring by electric field in a weakly coupled electron-hole system

Cited by 72 publications

References 0 publications

Optical transitions in broken gap heterostructures

Optical transitions in broken gap heterostructures

Spin states in InAs/AlSb/GaSb semiconductor quantum wells

Insulating State and Giant Nonlocal Response in anInAs/GaSbQuantum Well in the Quantum Hall Regime

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