Band-structure simulations for overlap wave functions between electrons and holes for recombination in undoped GaAs/AlGaAs heterostructures

Kim, Do-Hoon; Lee, Jae-Hyun; Son, Seok‐Kyun

doi:10.1007/s40042-021-00383-w

Cited by 1 publication

(1 citation statement)

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“…The impurity level can function as a 'trap' for capturing carriers, thereby influencing carrier mobility. The presence of gap defects will significantly alter the energy band structure of the GaAs/AlAs superlattice and induce its manifestation of metallicity [1]. Despite their relatively small number compared to nondefect atoms, these defects can significantly impact the mechanical, thermal, electrical, and optical properties of the material.…”

Section: Introductionmentioning

confidence: 99%

Multi-Directional Displacement Threshold Energy and Crystal Irradiation Damage Model

Zhang,

Zeng,

et al. 2023

Applied Sciences

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Subject to intense high-energy particle irradiation, various effects manifest within a material. Specifically, when high-energy particles collide with lattice atoms in a crystal material, a sequence of interactions is set in motion, initiating irradiation effects. Using GaAs solar cells as an example, this study investigates how potential barriers in different directions of atoms in sphalerite structures affect atomic displacement and establishes a probability model for lattice atomic displacement under proton irradiation. By combining Markov chains, changes in displacement threshold energy with different crystal orientations are described, and a damage model for cascading collision relationships that cause irradiation effects is established. Finally, the new model is compared to classical models, and differences in defects caused by proton impacts at several energies on GaAs crystals are simulated.

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Section: Introductionmentioning

confidence: 99%