Band structure properties, phonons, and exciton fine structure in 
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-SiC measured by wavelength-modulated absorption and low-temperature photoluminescence

Klahold, Walter M.; Choyke, W. J.; Devaty, Robert P.

doi:10.1103/physrevb.102.205203

Cited by 3 publications

(1 citation statement)

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“…Accordingly, exciton properties in semiconductor quantum devices have become an important topic of research in condensed matter physics. Moreover, studies on the state of exciton in quantum dots have mainly considered the confinement effect of potential well, such as the finite barrier potential [17,18] , valence-band mixing [19] , dispersion relation [20,21] , mass [22−24] , dielectric constant mismatch [25,26] , etc. Qualitative and quantitative results obtained from exciton binding energy and energy level are consistent with the experimental results [27−29] .…”

Section: Introductionmentioning

confidence: 99%

Behavior of exciton in direct−indirect band gap Al_xGa_1−xAs crystal lattice quantum wells

Sun,

Zhang,

Han

et al. 2024

J. Semicond.

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Excitons have significant impacts on the properties of semiconductors. They exhibit significantly different properties when a direct semiconductor turns in to an indirect one by doping. Huybrecht variational method is also found to influence the study of exciton ground state energy and ground state binding energy in Al x Ga1−x As semiconductor spherical quantum dots. The Al x Ga1−x As is considered to be a direct semiconductor at Al concentration below 0.45, and an indirect one at the concentration above 0.45. With regards to the former, the ground state binding energy increases and decreases with Al concentration and eigenfrequency, respectively; however, while the ground state energy increases with Al concentration, it is marginally influenced by eigenfrequency. On the other hand, considering the latter, while the ground state binding energy increases with Al concentration, it decreases with eigenfrequency; nevertheless, the ground state energy increases both with Al concentration and eigenfrequency. Hence, for the better practical performance of the semiconductors, the properties of the excitons are suggested to vary by adjusting Al concentration and eigenfrequency

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Section: Introductionmentioning

confidence: 99%

Behavior of exciton in direct−indirect band gap Al_xGa_1−xAs crystal lattice quantum wells

Sun,

Zhang,

Han

et al. 2024

J. Semicond.

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Structural characteristics of 3C–SiC thin films grown on Si-face and C-face 4H–SiC substrates by high temperature chemical vapor deposition

Feng

Lin

Xin

et al. 2023

Vacuum

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Angle-Dependent Raman Scattering Studies on Anisotropic Properties of Crystalline Hexagonal 4H-SiC

et al. 2022

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Raman scattering spectroscopy (RSS) has the merits of non-destructiveness, fast analysis, and identification of SiC polytype materials. By way of angle-dependent Raman scattering (ADRS), the isotropic characteristics are confirmed for c-face 4H-SiC, while the anisotropic properties of a-face 4H-SiC are revealed and studied in detail via combined experiments and theoretical calculation. The variation functional relationship of the angle between the incident laser polarization direction and the parallel (perpendicular) polarization direction was well established. The selection rules of wurtzite 4H-SiC are deduced, and the intensity variations of the A1, E2, and E1 Raman phonon modes dependent on the incident angle are calculated, and well-matched with experimental data. Raman tensor elements of various modes are determined.

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Band structure properties, phonons, and exciton fine structure in 4H -SiC measured by wavelength-modulated absorption and low-temperature photoluminescence

Cited by 3 publications

References 74 publications

Behavior of exciton in direct−indirect band gap Al_xGa_1−xAs crystal lattice quantum wells

Behavior of exciton in direct−indirect band gap Al_xGa_1−xAs crystal lattice quantum wells

Structural characteristics of 3C–SiC thin films grown on Si-face and C-face 4H–SiC substrates by high temperature chemical vapor deposition

Angle-Dependent Raman Scattering Studies on Anisotropic Properties of Crystalline Hexagonal 4H-SiC

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Band structure properties, phonons, and exciton fine structure in 4H -SiC measured by wavelength-modulated absorption and low-temperature photoluminescence

Cited by 3 publications

References 74 publications

Behavior of exciton in direct−indirect band gap Al x Ga1−x As crystal lattice quantum wells

Behavior of exciton in direct−indirect band gap Al x Ga1−x As crystal lattice quantum wells

Structural characteristics of 3C–SiC thin films grown on Si-face and C-face 4H–SiC substrates by high temperature chemical vapor deposition

Angle-Dependent Raman Scattering Studies on Anisotropic Properties of Crystalline Hexagonal 4H-SiC

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Behavior of exciton in direct−indirect band gap Al_xGa_1−xAs crystal lattice quantum wells

Behavior of exciton in direct−indirect band gap Al_xGa_1−xAs crystal lattice quantum wells