2018
DOI: 10.48550/arxiv.1810.08927
|View full text |Cite
Preprint
|
Sign up to set email alerts
|

Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0

Year Published

2022
2022
2022
2022

Publication Types

Select...
1

Relationship

0
1

Authors

Journals

citations
Cited by 1 publication
(2 citation statements)
references
References 0 publications
0
2
0
Order By: Relevance
“…They are most pronounced in ultrathin films with the thickness of several PbI2 layer packets (3)(4) in the case of shear vibrations phonon modes (Fig. 4 a) but several tens (50-100) in flexural (Fig.…”
Section: Velocity Spectrum Of Acoustic Phonons In the 2h-pbi2 Nanofilmmentioning
confidence: 97%
See 1 more Smart Citation
“…They are most pronounced in ultrathin films with the thickness of several PbI2 layer packets (3)(4) in the case of shear vibrations phonon modes (Fig. 4 a) but several tens (50-100) in flexural (Fig.…”
Section: Velocity Spectrum Of Acoustic Phonons In the 2h-pbi2 Nanofilmmentioning
confidence: 97%
“…Despite the fact that the properties of lead iodide and nanostructures based on it have been studied for a long time the interest in them has not decreased today. This is due to the fact that the combination of unique properties of this layered semiconductor with unique properties of low-dimensional structures is a very promising direction in the design of new generations of electronic and electrooptical devices for a wide range of purposes [1][2][3][4]. The need to develop this area stimulated an in-depth study of peculiarities of physical processes in such structures.…”
Section: Introductionmentioning
confidence: 99%