2016
DOI: 10.1126/science.aaf0590
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Band structure engineering in organic semiconductors

Abstract: A key breakthrough in modern electronics was the introduction of band structure engineering, the design of almost arbitrary electronic potential structures by alloying different semiconductors to continuously tune the band gap and band-edge energies. Implementation of this approach in organic semiconductors has been hindered by strong localization of the electronic states in these materials. We show that the influence of so far largely ignored long-range Coulomb interactions provides a workaround. Photoelectro… Show more

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Cited by 253 publications
(310 citation statements)
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References 51 publications
(45 reference statements)
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“…[25] However, only F x ZnPcs (x = 0, 4, 8, 16) were studied in their work. [25] However, only F x ZnPcs (x = 0, 4, 8, 16) were studied in their work.…”
Section: Doi: 101002/adma201605053mentioning
confidence: 99%
See 1 more Smart Citation
“…[25] However, only F x ZnPcs (x = 0, 4, 8, 16) were studied in their work. [25] However, only F x ZnPcs (x = 0, 4, 8, 16) were studied in their work.…”
Section: Doi: 101002/adma201605053mentioning
confidence: 99%
“…[25] However, only F x ZnPcs (x = 0, 4, 8, 16) were studied in their work. [25] In addition, it is found from our calculated values that quadruple moments are not significantly affected by a different central metal ion in the F x MePcs (Me = Cu, Zn; x = 0, 4, 8, 16) studied, which indicates the p-type to n-type transition observed in our systems is mainly derived from the fluorination of metal phthalocyanines that leads to the polarization change. The eigenvalues of quadruple tensors of all system studied at ω B97XD/6-311G level are given in Table S1 (Supporting Information), with similar trends observed in both systems if compared to Table S1 (Supporting Information) of recent work.…”
Section: Doi: 101002/adma201605053mentioning
confidence: 99%
“…This type of band gap engineering has recently been realised in some organic semiconductors, despite the stronger localization of their electronic states. 65 It is therefore interesting to see whether we can obtain an intermediate value of the band gap from mixing the wide-gap and narrow-gap PMOF materials.…”
Section: 64mentioning
confidence: 99%
“…Specifically, the additional functional control, which may be achieved through the formation of heterostructures realized by placing one supramolecular layer on another and resulting in growth into the third dimension perpendicular to the substrate, has not been widely explored for these materials. Such additional control of material properties is well established for semiconductors, both organic [25][26][27][28][29][30] and inorganic 31 , and, more recently, layered materials 32 , providing a strong motivation to explore analogue materials derived from stacked supramolecular networks. Here we describe the successful formation of heterostructures formed by the sequential growth of distinct one-and two-dimensional arrays.…”
mentioning
confidence: 99%