Band structure anisotropy effects on the ultrafast electron transport in 4H-SiC

The effect of annealing in carbon powders on the anisotropy of the thermoelectric properties of SrTiO3−δ single crystals on the (001) crystal plane

“…The anisotropy of the band structure has been observed in 4H-SiC. 24 For the SrTiO 3 single crystals, owing to the difference in atomic arrangements in different directions, the band structure should be different in the selected crystal orientations. The Fermi level of the SrTiO 3 single crystals in the [100], [110], [510] and [320] directions is located at the valence band maximum (VBM), which have the band gap of 0.56 eV, 2.46 eV, 2.22 eV and 2.44 eV, respectively.…”