2020
DOI: 10.3390/nano10050933
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Band Structure and Intersubband Transitions of Three-Layer Semiconductor Nanoplatelets

Abstract: This paper presents the first general theory of electronic band structure and intersubband transitions in three-layer semiconductor nanoplatelets. We find a dispersion relation and wave functions of the confined electrons and use them to analyze the band structure of core/shell nanoplatelets with equal thicknesses of the shell layers. It is shown that the energies of electrons localized inside the shell layers can be degenerate for certain electron wave vectors and certain core and shell thicknesses. We also s… Show more

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Cited by 2 publications
(3 citation statements)
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“…The physical properties of quasi-two-dimensional colloidal semiconductor nanostructures with planar geometry, so-called semiconductor nanoplatelets (NPLs), along with many low-dimensional semiconductors, have also been intensively studied in the last decade (see Refs. [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 ] and references therein). Along with quantum wells (QWs) and quantum dots (QDs), semiconductor NPLs are the next generation of semiconductor nanostructures with the maximum possible miniaturization of the sample in the growth direction.…”
Section: Introductionmentioning
confidence: 99%
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“…The physical properties of quasi-two-dimensional colloidal semiconductor nanostructures with planar geometry, so-called semiconductor nanoplatelets (NPLs), along with many low-dimensional semiconductors, have also been intensively studied in the last decade (see Refs. [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 ] and references therein). Along with quantum wells (QWs) and quantum dots (QDs), semiconductor NPLs are the next generation of semiconductor nanostructures with the maximum possible miniaturization of the sample in the growth direction.…”
Section: Introductionmentioning
confidence: 99%
“…Along with quantum wells (QWs) and quantum dots (QDs), semiconductor NPLs are the next generation of semiconductor nanostructures with the maximum possible miniaturization of the sample in the growth direction. One of the most intensively and successfully studied objects in this area are semiconductor NPLs of II-VI compounds with wurtzite or zinc blende structure (CdS, CdSe, CdTe [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 ], HgSe, HgTe [ 21 , 22 ]) and, partly, compounds IV–VI (PbS, PbSe, PbTe [ 4 , 12 , 23 , 24 , 25 ], as well as NPLs based on In, Sn, Cu [ 4 ]). The dimensions of these systems on the plane of the plate can reach from the tens, hundreds or even thousands of angstroms, while in the transverse direction, the thickness of the NPLs can reach only a few atomic layers and is controlled up to a monolayer precision and almost ideal thickness uniformity [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 …”
Section: Introductionmentioning
confidence: 99%
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