2021
DOI: 10.1016/j.seppur.2020.118258
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Band-potential fluctuation in C3N4/BiOCl hetero-junction for boosting photo-catalytic activity

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Cited by 32 publications
(11 citation statements)
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“…21 Using an appropriate semiconductor photocatalyst as a template to effectively control the thickness of BiOCl nanosheets and prevent their aggregation through in situ growth is an effective method to enhance BiOCl light capture and promote the segregation of photoexcited carriers. [22][23][24] Huang et al fabricated the type II BiOCl/Bi 5 O 7 I 2D/3D heterojunction by in situ growth of ultrathin BiOCl nanosheets on the surface of Bi 5 O 7 I microspheres. The ultrathin BiOCl nanosheets showed a significant improvement in visible light utilization and photogenerated carrier separation, and displayed admirable photocatalytic degradation activity for RhB and TC.…”
Section: Introductionmentioning
confidence: 99%
“…21 Using an appropriate semiconductor photocatalyst as a template to effectively control the thickness of BiOCl nanosheets and prevent their aggregation through in situ growth is an effective method to enhance BiOCl light capture and promote the segregation of photoexcited carriers. [22][23][24] Huang et al fabricated the type II BiOCl/Bi 5 O 7 I 2D/3D heterojunction by in situ growth of ultrathin BiOCl nanosheets on the surface of Bi 5 O 7 I microspheres. The ultrathin BiOCl nanosheets showed a significant improvement in visible light utilization and photogenerated carrier separation, and displayed admirable photocatalytic degradation activity for RhB and TC.…”
Section: Introductionmentioning
confidence: 99%
“…The variation of electron cloud density can induce the binding energy change, and usually the shielding effect weakens as the electron density decreases, resulting in higher binding energy. 37 Therefore, the heterostructure formation leads to decreased electron density on CNS and increased electron density on BOCB-OV. This may induce migration of electrons from CNS to BOCB-OV and build an internal electric field.…”
Section: Resultsmentioning
confidence: 99%
“…These results indicate that CNS and CNSNV are n-type semiconductors, while BOCB and BOCB-OV are p-type semiconductors. 37…”
Section: Resultsmentioning
confidence: 99%
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“…3g, CN/BOC shows a good contact interface between different crystal materials, and the lattice spacing of about 0.28 nm and 0.34 nm is corresponds to (110) and (101) crystal planes of BOC, respectively [33]. In addition, some lattice defects (marked by blue ovals) can be clearly seen, which may be caused by the existence of oxygen vacancies or defects on the crystal surface [34]. The EDX mapping (Fig.…”
Section: Characterizationmentioning
confidence: 92%