Band offsets in Si/Si1−x−yGexCy heterojunctions measured by admittance spectroscopy

Stein, B. L.; Yu, E. T.; Croke, E. T.; Hunter, A. T.; Laursen, Thomas; Bair, A. E.; Mayer, J. W.; Ahn, C. C.

doi:10.1063/1.119188

Cited by 28 publications

(19 citation statements)

References 21 publications

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“…Therefore, process margin for SiGe HBT fabrication can be relaxed. On the other hand, it has been reported that the bandgap and the band offsets with respect to the conduction band and valence band sensitively varies with C contents and strain in Si 1ÀxÀy Ge x C y films [151][152][153][154][155][156][157][158][159][160][161]. On the basis of the control over the band alignment in the Si 1ÀxÀy Ge x C y hetero structures, Si 1ÀxÀy Ge x C y epitaxial films were applied to channel layers in MOSFET [162,163], high-electron mobility transistor (HEMT), and optical devices [164][165][166].…”

Section: Formation Of Sigec Alloysmentioning

confidence: 99%

Fabrication technology of SiGe hetero-structures and their properties

Shiraki

Sakai

2005

Surface Science Reports

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Section: Formation Of Sigec Alloysmentioning

confidence: 99%

Fabrication technology of SiGe hetero-structures and their properties

Shiraki

Sakai

2005

Surface Science Reports

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“…Furthermore, while most of the band offset between SiGeC and Si lies in the valence band, its conduction band offset is larger than that between SiGe and Si. 12,13 This makes it possible to use thermionic emission to enhance the TE cooling for both n-and p-type SiGeC/Si materials. [1][2][3][4] In this letter, we report the experimental results on SiGeC/Si superlattice microcoolers.…”

mentioning

confidence: 99%

SiGeC/Si superlattice microcoolers

Fan

Zeng

LaBounty

et al. 2001

Applied Physics Letters

209

100

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Monolithically integrated active cooling is an attractive way for thermal management and temperature stabilization of microelectronic and optoelectronic devices. SiGeC can be lattice matched to Si and is a promising material for integrated coolers. SiGeC/Si superlattice structures were grown on Si substrates by molecular beam epitaxy. Thermal conductivity was measured by the 3 method. SiGeC/Si superlattice microcoolers with dimensions as small as 40ϫ40 m 2 were fabricated and characterized. Cooling by as much as 2.8 and 6.9 K was measured at 25°C and 100°C, respectively, corresponding to maximum spot cooling power densities on the order of 1000 W/cm 2 . © 2001 American Institute of Physics. ͓DOI: 10.1063/1.1356455͔Thermoelectric ͑TE͒ refrigeration in a solid-state active cooling method with high reliability. Bi 2 Te 3 -based TE coolers are widely used for cooling and temperature stabilization of microelectronic and optoelectronic devices, but their processing is a bulk technology and is incompatible with integrated circuit fabrication process. Solid-state coolers monolithically integrated with microelectronic and optoelectronic devices are an attractive way to achieve compact and efficient cooling. It can lower the cost of fabrication and packaging, and can selectively cool individual key devices instead of the whole chip. However, the thermoelectric figure of merit ͑ZT͒ is quite low for most of the semiconductors used in microelectronics and optoelectronics. This makes it difficult to get high cooling performance. Recently heterostructure thermionic and superlattice coolers have been proposed, and theoretical calculations show that large improvements in ZT can be achieved and efficient refrigeration becomes possible with coolers made of conventional semiconductor materials.

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“…Extensive research has been also carried out to reveal the detailed band alignment of Si 1Ϫx C x /Si and Si 1ϪxϪy Ge x C y /Si heterostructures. [2][3][4] The charge transport properties have been carefully examined in the course of applying these systems as active layers in electronic devices. 1,5 The crystalline quality of Si 1ϪxϪy Ge x C y epitaxial films on Si is of particular importance with regard to their electronic and optical properties.…”

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confidence: 99%