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Ji, Guangyong; Agarwala, S.; Huang, Daming; Chyi, Jen‐Inn; Morkoç̌, H.

doi:10.1103/physrevb.38.10571

Cited by 55 publications

(24 citation statements)

References 9 publications

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“…Experimental data and theoretical adjustments have suggested a type-II band alignment for GaAs 1Ϫx Sb x /GaAs QW structures and that, in this material, the valence band offset (⌬E V ) is higher than the conduction band offset (⌬E C ). [38][39][40] Teissier et al 40 verified that the conduction band position of the GaAs 1Ϫx Sb x in the GaAs 1Ϫx Sb x /GaAs QW system is situated only ϳ11 meV over the conduction band position of the GaAs, considering ⌬E V ϭ245 meV at xϭ0. 15.…”

Section: Resultsmentioning

confidence: 99%

Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

Lourenço

Dias

Poças

et al. 2003

Journal of Applied Physics

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GaAsSbN/GaAs strained-layer single quantum wells grown on a GaAs substrate by molecular-beam epitaxy with different N concentrations were studied using the photoluminescence ͑PL͒ technique in the temperature range from 9 to 296 K. A strong redshift in optical transition energies induced by a small increase in N concentration has been observed in the PL spectra. This effect can be explained by the interaction between a narrow resonant band formed by the N-localized states and the conduction band of the host semiconductor. Excitonic transitions in the quantum wells show a successive red/blue/redshift with increasing temperature in the 2-100 K range. The activation energies of nonradiative channels responsible for a strong thermal quenching are deduced from an Arrhenius plot of the integrated PL intensity.

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Section: Resultsmentioning

confidence: 99%

Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

Lourenço

Dias

Poças

et al. 2003

Journal of Applied Physics

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“…For the sake of simplicity, the ternary parameters for GaAs 1−X Sb X were derived from the binary parameters by linear interpolation. 17 By solving the diffusion equation numerically, the spatial distribution of Sb content is determined, where the diffusion process is assumed to be isotropic and described by a diffusion coefficient D independent of the alloy composition. 18 We then calculate the wave function h of the heavy hole within the effective mass approximation.…”

Section: Effects Of Sb/as Intermixing On Optical Properties Of Gasb Tmentioning

confidence: 99%

Effects of Sb/As intermixing on optical properties of GaSb type-II quantum dots in GaAs grown by droplet epitaxy

Kawazu

Sakaki

2010

Applied Physics Letters

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Optical properties of GaSb type-II quantum dots (QDs) in GaAs were studied and compared with a theoretical model to clarify how the spatial overlap of holes in the dot and electrons outside is affected by the interdiffusion of Sb and As. GaSb QDs were grown in a GaAs substrate by droplet epitaxy and annealed at the temperature Ta=650–850 °C to induce the Sb/As intermixing. Photoluminescence (PL) studies showed that the integrated PL intensity I decreases to less than 1/10 as Ta is raised from 650 to 750 °C, while I increases by three orders of magnitude with the increase of Ta from 750 to 850 °C. This behavior is explained by the overlap Θ between electron and hole wave functions; in an initial stage of the interdiffusion, the mixing occurs only near the dot/matrix boundary, leading to the decrease in the overlap Θ, since electrons are more repelled by the dot. In later stages, however, the hole confinement and the electron repulsion in the dot both weaken, leading to the increase in the overlap Θ.

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“…One of the most important features is the possibility to tune the conduction lineup from type-I to type-II band alignment. [1][2][3][4][5][6] While the type-I structures found their application in light emitting devices, the unique properties of type-II GaAsSb/GaAs heterostructures can result in substantial improvements in the performance of near infrared detectors and heterojunction bipolar transistors. 7,8 Type-II GaAsSb/GaAs QWs [9][10][11] have also been used in the development of laser diodes emitting at 1.3 m, which may provide an interesting alternative to GaAs-based telecommunications lasers based on highly strained InGaAs/GaAs QWs, dilute nitride QWs, or InAs quantum dots.…”

mentioning

confidence: 99%

Carrier dynamics between delocalized and localized states in type-II GaAsSb/GaAs quantum wells

Baranowski

Syperek

Kudrawiec

et al. 2011

Applied Physics Letters

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Access and use of this website and the material on it are subject to the Terms and Conditions set forth at Carrier dynamics between delocalized and localized states in type-II GaAsSb/GaAs quantum wells Baranowski, M.; Syperek, M.; Kudrawiec, R.; Misiewicz, J.; Gupta, J.A.; Wu, X.; Wang, R.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=fr L'accès à ce site Web et l'utilisation de son contenu sont assujettis aux conditions présentées dans le site LISEZ CES CONDITIONS ATTENTIVEMENT AVANT D'UTILISER CE SITE WEB. NRC Publications Record / Notice d'Archives des publications de CNRC:http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=21271287&lang=en http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=21271287&lang=fr READ THESE TERMS AND CONDITIONS CAREFULLY BEFORE USING THIS WEBSITE.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=en Vous avez des questions? Nous pouvons vous aider. Pour communiquer directement avec un auteur, consultez la première page de la revue dans laquelle son article a été publié afin de trouver ses coordonnées. Si vous n'arrivez pas à les repérer, communiquez avec nous à PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. Questions? Contact the NRC Publications Archive team atPublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. If you wish to email the authors directly, please see the first page of the publication for their contact information. NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous.http://doi.org/10.1063/1.3548544Applied Physics Letters, 98, 6, 2011 Carrier dynamics between delocalized and localized states in type-II GaAsSb/GaAs quantum wells The carrier dynamics in type-II GaAsSb/GaAs quantum well ͑QW͒ is investigated by time-resolved photoluminescence at low temperature. A detailed analysis of the experimental data reveal a complex carrier relaxation scenario involving both delocalized and localized states. We show that the QW emission is controlled by the dynamics of the band bending effect, related to temporal changes in the spatial charge separation near the GaAsSb/GaAs heterointerface, whereas localized states play a significant role in the carrier relaxation/redistribution between QW states.

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Band lineup inGaAs1−xSb
Guangyong Ji
¹
,
S. Agarwala
²
,
Daming Huang
³

et al.

Cited by 55 publications

References 9 publications

Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

Effects of Sb/As intermixing on optical properties of GaSb type-II quantum dots in GaAs grown by droplet epitaxy

Carrier dynamics between delocalized and localized states in type-II GaAsSb/GaAs quantum wells

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Band lineup inGaAs1−xSbGuangyong Ji1, S. Agarwala2, Daming Huang3 et al.

Cited by 55 publications

References 9 publications

Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

Effects of Sb/As intermixing on optical properties of GaSb type-II quantum dots in GaAs grown by droplet epitaxy

Carrier dynamics between delocalized and localized states in type-II GaAsSb/GaAs quantum wells

Contact Info

Product

Resources

About

Band lineup inGaAs1−xSb
Guangyong Ji
¹
,
S. Agarwala
²
,
Daming Huang
³

et al.