Band gap modification in Ne+-ion implanted In1−xGaxAs/InP and InAsyP1−y/InP quantum well structures

Wan, Jian Wei; Simmons, J.G.; Thompson, David A.

doi:10.1063/1.364440

Cited by 23 publications

(7 citation statements)

References 9 publications

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“…Thus, one main reason for non-lasing at room temperature was the insufficient degree of quantum well intermixing: for room temperature operation, our AkT rule of thumb would imply that more than 100 annealing in the InGaAs/InP materials system has previously been shown experi mentally to allow bandgap shifts as large as 200 meV. 68 The intermixing of thinner wells and thick, high-bandgap barriers would enable the needed amount of carrier confinement.…”

Section: Ion Implanted Lateral Injection Lasersmentioning

confidence: 95%

Lateral Injection Lasers

Sargent¹,

XU²

2000

Selected Topics in Electronics and Systems

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Since its invention in the 60's, the semiconductor laser has relied on vertical injection of electrons and holes in order to pump the active region to inversion. While many as pects of semiconductor laser development have seen tremendous innovation and marked progress, this vertical injection scheme has remained unchanged. In contrast, the elec tronic transistor has evolved from the early dominance of vertical injection to today's largely lateral injection CMOS platform, which yielded new performance, functionality, and integrability and enabled the astonishingly successful integrated circuit revolution.The lateral current injection laser offers advantages which go far beyond opto electronic integrability: it enables new functionalities, post-fabrication processing and engineering, and in some aspects of normal operation it can lead to greatly improved performances. To realize its full potential, this new class of semiconductor lasers deserves the same attention and the intensive iterations of efforts in theory, design, fabrication, and experimental probing as its vertical cousin has been received.We introduce a first-principles, combined theoretical-experimental approach to the exploration of the LCI laser. It reveals the role of lateral ambipolar drift-diffusion of carriers in either hindering or, potentially, in enhancing the provision of gain to the desired optical mode; of two-dimensional bandstructure engineering of the injection path and active region to achieve low differential resistance and efficient modal gain provision; of selective formation and lateral positioning of heterojunction in enabling high-efficiency device operation; and of adiabatic injection of electrons and holes across diffusivelygraded heterojunctions in facilitating carrier capture into 2D quantum well states.Our results point to the tremendous promise of lasers based on lateral injection of current in enabling vertical cavity lasers with vastly increased performance and functional diversity; multi-terminal devices such as lasers with capacitive gain and wave length tunability; high-speed directly-modulated lasers with reduced chirp; and func tional devices with directly integrated high-speed longitudinal modulation.

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Section: Ion Implanted Lateral Injection Lasersmentioning

confidence: 95%

Lateral Injection Lasers

Sargent¹,

XU²

2000

Selected Topics in Electronics and Systems

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“…Band gap modification in Netion implanted InGaAs/InP (for various Ga concentrations) and InAsP/InP (for 32% As) quantum well structures has been studied by low temperature PL spectra [27]. The maximum usable high temperature anneal for inducing the intermixing using an InP proximity cap is found to be -700 degrees C for 13 s. A second low-temperature (300 degrees C) anneal, following the high-temperature (700 degrees C) anneal, is found to induce greater band gap changes than the simple one-step anneal at 700 degrees C. The changes are found to be approximately proportional to the difference of bandgap energy between the well and the barrier materials; the proportionality coefficient increases with ion dose and reaches a maximum at a dose of -2 x 1 O' cm2.…”

Section: Band Engineeeiungmentioning

confidence: 99%

Quantum well intermixing: materials modeling and device physics

Li¹

1998

Physics and Simulation of Optoelectronic Devices VI

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Quantum well composition intermixing is a thermal induced interdiffusion of the constituent atoms through the heterointerface. The intermixed structures created by both impurity induced and impurity free or vacancy promoted processes have recently attracted high attention. The mterdiffusion mechanism is no longer confmed to a single phase diffusion for two constituent atoms, but it can now consist of two or multiple phases and/or for multiple species, such as three cations interdiffusion and two pairs of cation-anion interdiffusion. A review on the impact of intermixing on device physics is presented with many interesting features. For instance, both compressive or tensile strain materials and both blue or red shifts in the bandgap can be achieved depending on the types of intermixing. The recent advancement in intermixing modified optical properties, such as absorption, refractive index as well as electro-optics effects are discussed. In addition, this paper will place a strong emphasis on the device application of the intermixing technology. The advantage of being able to tune the material provides a way to improve the performance of photodetectors and modulators. Attractive distributed-feedback and vertical cavity laser dynamics have been shown due to some unique device physics of the quantum well intermixing. Several state-ofthe-art results will be summarized with an emphasis on its future development and directions.

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“…Ion implantation and annealing in the InGaAs/InP materials system has previously been shown experimentally to allow bandgap shifts as large as 200 meV. 68 The intermixing of thinner wells and thick, high-bandgap barriers would enable the needed amount of carrier confinement. We compare in Fig.…”

Section: Ion Implanted Lateral Injection Lasersmentioning

confidence: 99%

Lateral Injection Lasers

Sargent

1998

Int. J. Hi. Spe. Ele. Syst.

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Since its invention in the 60's, the semiconductor laser has relied on vertical injection of electrons and holes in order to pump the active region to inversion. While many aspects of semiconductor laser development have seen tremendous innovation and marked progress, this vertical injection scheme has remained unchanged. In contrast, the electronic transistor has evolved from the early dominance of vertical injection to today's largely lateral injection CMOS platform, which yielded new performance, functionality, and integrability and enabled the astonishingly successful integrated circuit revolution.The lateral current injection laser offers advantages which go far beyond optoelectronic integrability: it enables new functionalities, post-fabrication processing and engineering, and in some aspects of normal operation it can lead to greatly improved performances. To realize its full potential, this new class of semiconductor lasers deserves the same attention and the intensive iterations of efforts in theory, design, fabrication, and experimental probing as its vertical cousin has been received.We introduce a first-principles, combined theoretical-experimental approach to the exploration of the LCI laser. It reveals the role of lateral ambipolar drift-diffusion of carriers in either hindering or, potentially, in enhancing the provision of gain to the desired optical mode; of two-dimensional bandstructure engineering of the injection path and active region to achieve low differential resistance and efficient modal gain provision; of selective formation and lateral positioning of heteroj unction in enabling high-efficiency device operation; and of adiabatic injection of electrons and holes across diffusivelygraded heterojunctions in facilitating carrier capture into 2D quantum well states.Our results point to the tremendous promise of lasers based on lateral injection of current in enabling vertical cavity lasers with vastly increased performance and functional diversity; multi-terminal devices such as lasers with capacitive gain and wavelength tunability; high-speed directly-modulated lasers with reduced chirp; and functional devices with directly integrated high-speed longitudinal modulation.

show abstract

Band gap modification in Ne+-ion implanted In1−xGaxAs/InP and InAsyP1−y/InP quantum well structures

Cited by 23 publications

References 9 publications

Lateral Injection Lasers

Lateral Injection Lasers

Quantum well intermixing: materials modeling and device physics

Lateral Injection Lasers

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