Band-gap-graded Cu₂ZnSn(S,Se)₄ drives highly efficient solar cells

Abstract

Fabrication of high efficient solar cells is critical for photovoltaic application. The bandgap-graded absorber layer can not only drive carriers efficient collection but also improve the light harvesting. However, it...

Chemical insight into the hydrothermal deposition of Sb2(S,Se)3 towards delicate microstructure engineering

“…Rarely have these materials been explored for photovoltaics because of the difficulties in the fabrication of the as-prepared metal polysulfoselenide lms using MSPS approaches. [21][22][23][24][25][26][27][28][29][33][34][35] Furthermore, S and Se leave the as-prepared lm, resulting in volume shrinkage. Such a volume shrinkage may create a large number of pinholes in the absorber layer (Fig.…”

“…[18][19][20] Inspired by the preparation of solution-processed Cu(In,Ga)Se 2 , [21][22][23][24] Cu 2 -ZnSn(S,Se) 4 (ref. [25][26][27][28][29] and other metal sulfoselenide solar cells, [30][31][32] metal sulfoselenide precursor solution (MSPS) approaches have been adopted to prepare Sb 2 (S,Se) 3 solar cells. [33][34][35] However, these methods can only achieve power conversion efficiencies (PCEs) of less than 7%.…”

Positive Role of Inhibiting CZTSSe Decomposition on Intrinsic Defects and Interface Recombination of 12.03% Efficient Kesterite Solar Cells

“…To control the defects in CZTSSe absorber and the interface recombination of p-n heterojunction, multiple strategies have been employed. [10][11][12][13][14][15][16] At present, the homogeneous distribution of elements during CZTSSe synthesis is considered as a key factor to improving the photovoltaic performance of the CZTSSe device. [17][18][19][20] The homogeneous distribution of elements provides a stable and suitable chemical environment, which could significantly decrease the density of the intrinsic defects and the interface recombination.…”

Improvement of Photovoltaic Performance of Cu2ZnSn(S,Se)4 Solar Cells by Modification of Back Electrode Interface with Amorphous Boron Nitride

“…Recently, kesterite‐based Cu 2 ZnSn(S,Se) 4 (CZTSSe) thin film solar cell is considered to be one of the most promising inorganic thin film photovoltaic devices owing to its similar crystal structure to the commercialized Cu(In,Ga)Se 2 (CIGS) solar cell, earth‐abundant and nontoxic compositions, as well as high absorption coefficient (α>10 4 cm –1 ) and adjustable direct band gap ( E g = 1.0–1.5 eV). [ 1–4 ] Currently, the highest certified power conversion efficiency (PCE) of 13% was obtained for CZTSSe‐based thin film solar cell by Xin et al., [ 5 ] demonstrating its substantial commercial prospect. While it is still much lower than PCE of the counterpart CIGS devices (23.5%) [ 6 ] and its Shockley‐Queisser limit (32.8%).…”

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band gap (E g = 1.0-1.5 eV). [1][2][3][4] Currently, the highest certified power conversion efficiency (PCE) of 13% was obtained for CZTSSe-based thin film solar cell by Xin et al, [5] demonstrating its substantial commercial prospect. While it is still much lower than PCE of the counterpart CIGS devices (23.5%) [6] and its Shockley-Queisser limit (32.8%).

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