Band-gap expansion in the surface-localized electronic structure of MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>2</mml:mn></mml:msub></mml:math>(0002)

Han, Sang Wook; Cha, Gi-Beom; Frantzeskakis, Emmanouil; Razado-Colambo, Ivy; Ávila, J.; Park, Young S.; Kim, Dae Hyun; Hwang, Jihyun; Kang, J.-S.; Ryu, Sunmin; Yun, Won Seok; Hong, Soon Cheol; Asensio, M. C.

doi:10.1103/physrevb.86.115105

Cited by 49 publications

(35 citation statements)

References 31 publications

(46 reference statements)

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“…The VBS plot of the bare MoS 2 presents a VB maximum (VBM) peaked at Γ point and 0.89 eV far from the Fermi level. The main features in the VBS plot descend from S 3 p orbitals because the adopted photon energy h ν = 100 eV nearly corresponds to the Cooper minimum of Mo 4 d electrons; nonetheless, the observed VBM can be related to Mo 4 d z 2 orbitals as previously argued . A VB edge of 0.49 eV from the Fermi level ( E F ) was linearly extrapolated from the line profile of the VBS plot in Figure c, bottom panel.…”

Section: Electronic Band Alignment At the Si/mos2 Heterosheet Interfacementioning

confidence: 81%

Electron Confinement at the Si/MoS₂ Heterosheet Interface

Molle¹,

Lamperti²,

Rotta

et al. 2016

Adv Materials Inter

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lead to a nontrivial electronic coupling at the Si/MoS 2 heterosheet (HS) interface with possible impact on the electronic and optical applications. Indeed, interfacing MoS 2 with conventional semiconductors recently has recently led to the realization of a subthermionic tunnel FET, [ 12 ] and it was proposed as a feasible avenue for an improved photodetection [ 13 ] and enhanced photoresponsive behavior. [ 14 ] In the present work, our aim is to unravel the electronic band line-up at the HS interface between Si and MoS 2 , and to correlate it with the electrical response of the resultant HS-FET after stabilizing the Si NS with an Al 2 O 3 encapsulation layer. To this purpose, in situ angle-resolved photoemission spectroscopy (ARPES) from a synchrotron radiation (SR) source (photon energy h ν = 100 eV) and in situ nonmonochromatic laboratory X-ray photoemission spectroscopy (XPS) from a Mg Kα (photon energy h ν = 1253.6 eV) source were respectively used to inspect the valence band structure at the Si/MoS 2 HS interface and the chemical stability prior to and after encapsulation. In particular, based on highresolution SR-PES, the Si NS is observed to bend the electronic bands of the MoS 2 topmost layers enough to cause an electron accumulation at the Si/MoS 2 HS interface. This feature deeply infl uences the HS-FET response by inducing an effective n -type doping in the topmost MoS 2 region. Structural Details of the Si/MoS 2 Heterosheet InterfaceThe fi rst Brillouin zone of the prepared MoS 2 (0001) surface (see the Experimental Section) is displayed by the low energy electron diffraction (LEED) pattern in Figure 1 a that reproduces a hexagonal reciprocal lattice cell. A similar LEED pattern has been observed in Figure 1 b after Si NS deposition at 200 °C. This fact is consistent with a pseudomorphic growth of an Si monolayer mimicking the MoS 2 surface structure as previously reported. [ 11 ] The growth of the Si NS has been chemically identifi ed by means of in situ XPS monitoring of the Si 2 p core level photoemission line as a function of the take-off angle (TOA), i.e., the angle between the photoelectron beam and the nominal surface plane. The angular dependence of the Si 2 p line is reported in Figure 1

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Section: Electronic Band Alignment At the Si/mos2 Heterosheet Interfacementioning

confidence: 81%

Electron Confinement at the Si/MoS₂ Heterosheet Interface

Molle¹,

Lamperti²,

Rotta

et al. 2016

Adv Materials Inter

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show abstract

“…Figure shows the comparison of the ARPES data on graphite, where only the TiSe 2 bands are visible in the measured energy and momentum windows, with the ARPES data on MoS 2 . This comparison, together with the known bands for MoS 2 allows an easy identifications of the MoS 2 bands. Since MoS 2 is a wide band gap semiconductor, the states close to the Fermi level are not influenced by the MoS 2 bands.…”

Section: Resultsmentioning

confidence: 99%

Controlling the Charge Density Wave Transition in Monolayer TiSe₂: Substrate and Doping Effects

et al. 2018

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TiSe2 is an exciting material because it can be tuned between superconducting and charge density wave (CDW) transitions. In the monolayer limit, TiSe2 exhibits a sizable energy gap in the CDW phase that makes it a promising quantum material. It is shown that interfacing a single layer of TiSe2 with dissimilar van der Waals materials enables control of its properties. Using angle‐resolved photoemission spectroscopy, the energy gap opening is analyzed as a function of temperature for TiSe2 monolayers supported on different van der Waals substrates. A substantial increase in the CDW transition temperature of ≈45 K is observed on MoS2 compared to graphite (highly oriented pyrolytic graphite) substrates. This control of the CDW in monolayer TiSe2 is suggested to arise from varying charge screening of the unconventional CDW of TiSe2 by the substrate. In addition, the suppression of CDW order and a complete closing of the energy gap by electron doping of monolayer TiSe2 is demonstrated. Regulating the many‐body physics phenomena in monolayer TiSe2 lays the foundation of modifying TiSe2 in, for example, artificial van der Waals heterostructures and thus creates a new approach for utilizing the quantum states of TiSe2 in device applications.

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“…a) show similar characteristic peaks, before and after hydrogenation (for different doses), that are related to MoS 2 37. The shifts of hydrogenated MoS 2 shown inFigure 3(b) are caused by the rigid energy shift of all core-levels.…”

mentioning

confidence: 83%

Tunable Doping in Hydrogenated Single Layered Molybdenum Disulfide

et al. 2017

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Structural defects in the molybdenum disulfide (MoS) monolayer are widely known for strongly altering its properties. Therefore, a deep understanding of these structural defects and how they affect MoS electronic properties is of fundamental importance. Here, we report on the incorporation of atomic hydrogen in monolayered MoS to tune its structural defects. We demonstrate that the electronic properties of single layer MoS can be tuned from the intrinsic electron (n) to hole (p) doping via controlled exposure to atomic hydrogen at room temperature. Moreover, this hydrogenation process represents a viable technique to completely saturate the sulfur vacancies present in the MoS flakes. The successful incorporation of hydrogen in MoS leads to the modification of the electronic properties as evidenced by high resolution X-ray photoemission spectroscopy and density functional theory calculations. Micro-Raman spectroscopy and angle resolved photoemission spectroscopy measurements show the high quality of the hydrogenated MoS confirming the efficiency of our hydrogenation process. These results demonstrate that the MoS hydrogenation could be a significant and efficient way to achieve tunable doping of transition metal dichalcogenides (TMD) materials with non-TMD elements.

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Band-gap expansion in the surface-localized electronic structure of MoS2(0002)

Cited by 49 publications

References 31 publications

Electron Confinement at the Si/MoS₂ Heterosheet Interface

Electron Confinement at the Si/MoS₂ Heterosheet Interface

Controlling the Charge Density Wave Transition in Monolayer TiSe₂: Substrate and Doping Effects

Tunable Doping in Hydrogenated Single Layered Molybdenum Disulfide

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Band-gap expansion in the surface-localized electronic structure of MoS2(0002)

Cited by 49 publications

References 31 publications

Electron Confinement at the Si/MoS2 Heterosheet Interface

Electron Confinement at the Si/MoS2 Heterosheet Interface

Controlling the Charge Density Wave Transition in Monolayer TiSe2: Substrate and Doping Effects

Tunable Doping in Hydrogenated Single Layered Molybdenum Disulfide

Contact Info

Product

Resources

About

Electron Confinement at the Si/MoS₂ Heterosheet Interface

Electron Confinement at the Si/MoS₂ Heterosheet Interface

Controlling the Charge Density Wave Transition in Monolayer TiSe₂: Substrate and Doping Effects