Band gap engineering by substitution of S by Se in nanostructured CdS1−xSex thin films grown by soft chemical route for photosensor application

Siddiqui, Farha; Shaikh, Shaheed U.; Desale, Deepali J.; Upadhye, Deepak S.; Mahajan, Sandeep; Ghule, Anil V.; Varshney, Pankaj; Han, Sang Woo; Sharma, Ramphal

doi:10.1016/j.mssp.2014.07.014

Cited by 30 publications

(10 citation statements)

References 26 publications

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“…As expected, the peaks are slightly shifted to higher angles (2θ=0.2°) due to the introduction of S into the crystal lattice of CdSe, resulting in the ternary solid solution formation. As reported in literature for CdS 1-x Se x [12][13]19 , CdS 0.25 Se 0.75 films are polycrystalline with hexagonal phase showing preferential orientation on the (002) plane related to the JCPDS files No 50072. However, considering the similarity in the unit cell packing of cubic zinc blende and hexagonal wurtzite structures, the cubic phase contribution in these films could not be disregarded, as reported by Xie et al 12 .…”

Section: Structural and Morphological Propertiessupporting

confidence: 55%

Temperature and Deposition Time Effect on Properties and Kinetics of CdSe and CdS0.25Se0.75 Films Deposited by CBD

et al. 2017

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CdSe and CdS 0.25 Se 0.75 thin films were grown by the Chemical Bath Deposition technique at different temperatures (50-90°C) and deposition times (5-180 min). Both kinds of films are polycrystalline, constituted by nanostructured clusters of particles. CdSe films consist in a mixture of cubic and hexagonal phases (4-8 nm crystal size), whereas only the hexagonal phase is observed in the CdS 0.25 Se 0.75 ones (6±1 nm crystal size). A decrease on the CdSe films density was observed due to the sulfur introduction into the crystal lattice. The composition of the ternary films is affected by both temperature and deposition time. The Band gap values (E g ) are affected by temperature, atomic composition and deposition time, decreasing from 2.09 to 1.93 eV, showing a quantum confinement effect mainly in the CdSe films. The films thickness, ranging from 30 to 600 nm, increases as a function of temperature and deposition time. Photoluminiscence signal is improved after thermal treatment, evidenced by the radiative broad bands observed at 1.84 and 2.20 eV.

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Section: Structural and Morphological Propertiessupporting

confidence: 55%

Temperature and Deposition Time Effect on Properties and Kinetics of CdSe and CdS0.25Se0.75 Films Deposited by CBD

et al. 2017

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“…Therefore, α of the doped films enhanced significantly because the appearance of the transition energy levels ensured that a large number of photons were absorbed in different regions. [ 19,20 ]…”

Section: Resultsmentioning

confidence: 99%

Influential Ag Concentration in Optical–Electrical Properties of Cd_1–2xAg_2xSe Photoanodes for Quantum‐Dot‐Sensitized Solar Cell Applications

Tung

Dang

2020

Physica Status Solidi (a)

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Cd1−2xAg2xSe films (as 0% ≤ x ≤ 5%, at%) are synthesized by chemistry method for fabricating anodes in optoelectronic devices. Further, the structural, optical, and electrical properties of the ternary film are extensively investigated. The structural properties of the Cd1−2xAg2xSe anodes are characterized using X‐ray diffraction (XRD) which confirms the cubic structure in the anodes. The optical properties of the thin films are recorded by UV–vis with an effect of metal dopants. Those results are incorporated with Tauc correlation to determine the optical parameters, valence band and conduction band positions, steepness parameter, and electron–phonon interaction in the samples. In addition, the electrical characteristics of thin films are analyzed using their photocurrent density curves, and the characteristic resistances in the optoelectronic devices are determined using the electrochemical impedance spectrum.

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“…This result, obtained from the replacement of Cd atoms by the metal dopants in the doped films, which induces the d-state electrons of dopant atoms, appeared in Eg of CdSe QDs to introduce the energy levels of dopant in the Eg of CdSe QDs. Therefore, the absorption coefficient of the doped films was enhanced significantly because the appearance of the transition energy levels ensured that a large number of photons was absorbed in different regions [20,21]. To correlate the localized states with the Eg of the films, the Urbach energy (Eu) of the films was determined as follows [22] = exp ℎ…”

Section: Optical Characterizationmentioning

confidence: 99%

The Influence of Dopant Concentration on Optical-Electrical Features of Quantum Dot-Sensitized Solar Cell

et al. 2021

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In this study, TiO2/CdS/CdxCu1−xSe, TiO2/CdS/CdxMn1−xSe, and TiO2/CdS/CdxAg2−2xSe thin films were synthesized by chemical bath deposition for the fabrication of photoanode in quantum-dot-sensitized solar cells. As a result, the structural properties of the thin films have been studied by X-ray diffraction, which confirmed the zinc Blende structure in the samples. The optical films were researched by their experimental absorption spectra with different doping concentrations. Those results were combined with the Tauc correlation to estimate the absorption density, the band gap energy, valence band and conduction band positions, steepness parameter, and electron–phonon interaction. Furthermore, the electrical features, electrochemical impedance spectrum and photocurrent density curves were carried out. The result was used to explain the enhancing performance efficiency.

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Band gap engineering by substitution of S by Se in nanostructured CdS1−xSex thin films grown by soft chemical route for photosensor application

Cited by 30 publications

References 26 publications

Temperature and Deposition Time Effect on Properties and Kinetics of CdSe and CdS0.25Se0.75 Films Deposited by CBD

Temperature and Deposition Time Effect on Properties and Kinetics of CdSe and CdS0.25Se0.75 Films Deposited by CBD

Influential Ag Concentration in Optical–Electrical Properties of Cd_1–2xAg_2xSe Photoanodes for Quantum‐Dot‐Sensitized Solar Cell Applications

The Influence of Dopant Concentration on Optical-Electrical Features of Quantum Dot-Sensitized Solar Cell

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Band gap engineering by substitution of S by Se in nanostructured CdS1−xSex thin films grown by soft chemical route for photosensor application

Cited by 30 publications

References 26 publications

Temperature and Deposition Time Effect on Properties and Kinetics of CdSe and CdS0.25Se0.75 Films Deposited by CBD

Temperature and Deposition Time Effect on Properties and Kinetics of CdSe and CdS0.25Se0.75 Films Deposited by CBD

Influential Ag Concentration in Optical–Electrical Properties of Cd1–2xAg2xSe Photoanodes for Quantum‐Dot‐Sensitized Solar Cell Applications

The Influence of Dopant Concentration on Optical-Electrical Features of Quantum Dot-Sensitized Solar Cell

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Product

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Influential Ag Concentration in Optical–Electrical Properties of Cd_1–2xAg_2xSe Photoanodes for Quantum‐Dot‐Sensitized Solar Cell Applications