Band Gap Energy in Silicon

Low, Jeremy D.; Kreider, Michael L.; Pulsifer, Drew P.; Jones, A. R.; Gilani, Tariq

doi:10.33697/ajur.2009.017

Cited by 2 publications

(3 citation statements)

References 3 publications

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“…Therefore, it is essential to provide students with an additional simple experiment on the energy gap measurement in order to enhance their understanding of the theory. There are several methods to determine the energy gap of semiconductors, such as current-voltage (I -V) measurement at different temperatures [3,4], capacitance-voltage (C-V) measurement [5], optical methods such as the measurement of absorption and transmission spectra [6,7], and temperature-voltage (T -V) measurement with a constant bias current of diode [8][9][10][11]. Among them, the T -V measurement is simple, inexpensive and has been extensively employed for the experimental study of the energy gap of diodes in many advanced undergraduate laboratories [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

“…There are several methods to determine the energy gap of semiconductors, such as current-voltage (I -V) measurement at different temperatures [3,4], capacitance-voltage (C-V) measurement [5], optical methods such as the measurement of absorption and transmission spectra [6,7], and temperature-voltage (T -V) measurement with a constant bias current of diode [8][9][10][11]. Among them, the T -V measurement is simple, inexpensive and has been extensively employed for the experimental study of the energy gap of diodes in many advanced undergraduate laboratories [9][10][11]. For the T -V method, the energy gap of a diode can be determined by applying constant current and measuring the voltage drop across the diode within a certain temperature range.…”

Section: Introductionmentioning

confidence: 99%

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Automated method for measuring the energy gap of p–n junction semiconductor diodes with the temperature–voltage method

Klonkratog¹,

Somdock²,

Damrongsak³

2021

Eur. J. Phys.

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An automated system for measuring the energy gap E g of a p–n junction semiconductor diodes was presented in this study. The system, based on temperature–voltage (T–V) measurement, was designed and developed as a teaching tool to support teaching for undergraduate students. The energy gap of diodes was measured by varying the diode temperature from 273 to 343 K and by measuring the voltage drop across the diode while the bias current of diodes was kept constant at a specific value. In the proposed system, an Arduino UNO R3 microcontroller was employed to automatically acquire the temperature and voltage drop across the diode. T–V data were plotted, and then the slope and intercept were used to calculate the energy gap by a simplified diode equation. In this system, the temperature and voltage of the two diodes were measured simultaneously at different constant bias currents in the range of 10 μA–10 mA. The average E g value of 1.22 eV obtained in this work is in good agreement with that reported in the literature.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Automated method for measuring the energy gap of p–n junction semiconductor diodes with the temperature–voltage method

Klonkratog¹,

Somdock²,

Damrongsak³

2021

Eur. J. Phys.

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“…Since then, reports in this Journal have included demonstrations, emission correlation to bandgap of the diode, and general discussions of LED technology and how they are used in electronics . Physics education literature has focused on experiments created and designed to measure the bandgap of diodes. − Precker has also reported on a method to relate bandgap energy of the LED to the wavelength of emission . However, none of these reports specifically address the LED junction design and the details of how the intrinsic bandgap energy measured in these experiments is not necessarily the same as the active bandgap energy.…”

Section: Introductionmentioning

confidence: 99%

Investigating Bandgap Energies, Materials, and Design of Light-Emitting Diodes

Wagner

2016

J. Chem. Educ.

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A student laboratory experiment to investigate the intrinsic and extrinsic bandgaps, dopant materials, and diode design in light-emitting diodes (LEDs) is presented. The LED intrinsic bandgap is determined by passing a small constant current through the diode and recording the junction voltage variation with temperature. A second visible wavelength emission method is used to determine the active bandgap for comparative purposes. The active bandgap data is used along with literature values to interpolate the ratio of elemental dopant atoms in the LED semiconductor. This work also discusses the fundamentals of bandgap theory, LEDs, and diode design and how these experimental measurements correlate to the diode structure and dopant material used to manipulate the bandgap energy and observed emission profile. Suggested questions are provided in the supplemental materials to help students further explore and understand the topic. While this laboratory experiment was created for upper level undergraduates, it can be revised and simplified for use in high school and introductory level undergraduate courses.

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Band Gap Energy in Silicon

Cited by 2 publications

References 3 publications

Automated method for measuring the energy gap of p–n junction semiconductor diodes with the temperature–voltage method

Automated method for measuring the energy gap of p–n junction semiconductor diodes with the temperature–voltage method

Investigating Bandgap Energies, Materials, and Design of Light-Emitting Diodes

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