1995
DOI: 10.1016/0038-1098(95)00007-0
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Band gap energy and binding energies of Z3-excitions in CuCl

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Cited by 47 publications
(30 citation statements)
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“…The calculated transition energy to the (2P, 1s) state as a function of the dot size is plotted by the solid curve in Fig. 4, together with our experimental value (closed circle), the experimental data from [3] (open circles), and that for bulk crystals [8] (dashed line). The peak energy of the IRTA originating from the biexciton eventually Photon Energy (meV) Fig.…”
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confidence: 97%
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“…The calculated transition energy to the (2P, 1s) state as a function of the dot size is plotted by the solid curve in Fig. 4, together with our experimental value (closed circle), the experimental data from [3] (open circles), and that for bulk crystals [8] (dashed line). The peak energy of the IRTA originating from the biexciton eventually Photon Energy (meV) Fig.…”
mentioning
confidence: 97%
“…The solid line indicates the theoretical transition energy from 1S to 2P exciton states [4,7]. The broken line indicates that for the bulk crystal [8].…”
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confidence: 98%
“…CuCl is an appropriate material for the study of fundamental properties of the exciton and biexciton since they are very stable because of their large binding energy (197 meV for the exciton [2] and 32 meV for the biexciton [4]) compared to the other semiconductors. The exciton Rydberg states have been investigated by one-and twophoton absorption measurements [2].…”
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confidence: 99%
“…This energy structure can be observed by two methods. One is the one-and two-photon absorption measurements to detect the exciton states associated with Rydberg s-and p-series [2]. The other is a transient absorption from the lowest 1s state to the excited states associated with p-series [3].…”
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confidence: 99%
“…In GaAs quantum well [1,2] and type II superlattices [3], the binding energy of biexcitons over 2 meV has been observed, whereas in ZnSe quantum well [4] and CuCl single crystals [5][6][7] much higher binding energies have been measured. The first observation of biexcitons was made by Haynes [8] in crystalline silicon, and on the basis of his previous work on a neutral donor complex [9], Haynes used the ratio of the binding energy of a biexciton (E xx b ) to that of an exciton (E x b ) in silicon as 0.1.…”
mentioning
confidence: 99%