Band-gap and k.p. parameters for GaAlN and GaInN alloys

Pugh, S.K.; Dugdale, D. J.; Brand, S.; Abram, R. A.

doi:10.1063/1.371285

Cited by 52 publications

(16 citation statements)

References 24 publications

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“…Effective-mass parameters for Ga-rich alloys were compiled by Pugh et al [335]. Effective-mass parameters for Ga-rich alloys were compiled by Pugh et al [335].…”

Section: Inganmentioning

confidence: 99%

Electron Bandstructure Parameters

Vurgaftman

Meyer

2007

Nitride Semiconductor Devices: Principles and Simulation

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Fig. 2.1Recommended energy gaps of wurtzite nitride semiconductor alloys (lines) and binaries (points) vs. lattice constant. Band Structure Models 15The spin-degenerate conduction band is described by the anisotropic, parabolic form with wavefunctions comprised of the s-orbital (angular momentum l = 0) states:where k * , k * z are the wavevectors and m * , m * ⊥ are the effective masses along the in-plane and c-axis ([0001]) directions, respectively, a c1 and a c2 are the conduction-band deformation potentials, and ε ij are the strain tensor components. In the following, we cite the interband deformation potentials a 1 and a 2 , from which a c1 and a c2 may be obtained by subtracting the hydrostatic shift in the valence band, as determined by the D parameters in Eq. (2.5). The anisotropy is a distinguishing feature of the hexagonal crystal structure. Since the crystal-field and spin-orbit splittings in wurtzite nitride materials are rather small, the momentum matrix element E P and the F parameter are related to the effective mass and energy gap via:

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“…Effective-mass parameters for Ga-rich alloys were compiled by Pugh et al [335]. Effective-mass parameters for Ga-rich alloys were compiled by Pugh et al [335].…”

Section: Inganmentioning

confidence: 99%

Electron Bandstructure Parameters

Vurgaftman

Meyer

2007

Nitride Semiconductor Devices: Principles and Simulation

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“…Empirical pseudopotential method ͑EPM͒ 5 is widely used for such purposes and several results for GaN have already been published. [6][7][8][9][10] We have analyzed these proposed band structures and found them to be unsatisfactory for the conduction band properties, such as the conduction band effective mass and also in the agreement to the more recently released experimental data on the conduction band energies. 11,12 As this point is of central importance in our work, we have also performed an EPM study for WZ GaN, demanding a close fit to these conduction band properties.…”

Section: Introductionmentioning

confidence: 96%

Full-band polar optical phonon scattering analysis and negative differential conductivity in wurtzite GaN

Bulutay

Ridley

Zakhleniuk³

2000

Phys. Rev. B

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GaN has promising features for high-field electronics applications. To scrutinize these transport-related properties, primarily the dominant scattering mechanism in this material needs to be well characterized. In the quest for Bloch oscillations in bulk GaN, our aim is to conduct a full-band scattering analysis requiring very high energies where parabolic approximation is far from applicable. For this purpose, we first obtain an accurate band structure for the conduction band of wurtzite GaN based on the empirical pseudopotential method, using the most recent experimental data as the input. We compute the scattering rate, relevant up to room temperatures, due to longitudinal-optical-like and transverse-optical-like polar phonon modes along several (high-symmetry) directions, from the conduction band minimum at the zone center to the half of the reciprocal lattice vector in each direction. We observe that the location and the symmetry of the neighboring valleys to the route play a decisive role on the scattering rates. The observation of Bloch oscillations in bulk wurtzite GaN is doomed by the very large value of the polar scattering rate. However, there exists the possibility of a negative differential conductivity driven by the negative effective mass part of the band structure for fields above 2.3 MV/cm for wurtzite GaN

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“…The first direct transition at the Γ-point in the band structure appears at 5.74 eV. However, an indirect transition at lower energies as proposed for the X-point [17] could not be identified. Again, a small content of 2H-AlN could be identified with a content around 15%.…”

Section: Methodsmentioning

confidence: 80%

Polytype control and properties of AlN on silicon

Cimalla¹,

Lebedev

Kaiser

et al. 2005

phys. stat. sol. (c)

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In this paper we report on the optical and structural characterisation of cubic polytype AlN thin films on 3C-SiC/Si(111) pseudo-substrates prepared by carbonisation. We have found that 3C-AlN phase can be stabilised on the "waved" 3C-SiC(111) surface by polytype replication. On the other hand, 2H-AlN was grown on atomically smooth surfaces. X-ray diffraction and transmission electron microscopy imply that the cubic AlN was grown along with hexagonal inclusions up to 20%. Spectroscopic ellipsometry in the infrared region show the typical phonon lines for the two polytypes. The appearance of the TO phonon at 646 cm -1 confirms the existence of 3C-AlN. In the ultraviolet region the critical points in the band structure were identified. For 3C-and 2H-AlN the first direct transition at the Γ-point was determined to be at 5.74 eV and 6.16 eV, respectively. No indirect transition at lower energies was detected.

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Band-gap and k.p. parameters for GaAlN and GaInN alloys

Cited by 52 publications

References 24 publications

Electron Bandstructure Parameters

Electron Bandstructure Parameters

Full-band polar optical phonon scattering analysis and negative differential conductivity in wurtzite GaN

Polytype control and properties of AlN on silicon

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