Band engineered HOT midwave infrared detectors based on type-II InAs/GaSb strained layer superlattices

Gautam, Nutan; Myers, Stephen; Barve, Ajit V.; Klein, Brianna; Smith, E. P.; Rhiger, David R.; Plis, E.; Kutty, M. N.; Henry, Nathan; Schuler-Sandy, Ted; Krishna, S.

doi:10.1016/j.infrared.2012.12.017

Cited by 23 publications

(18 citation statements)

References 22 publications

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“…The pBiBn design (LWIR) was first introduced in 2010 by Gautam et al, which due to its unipolar blocking layers exhibited comparatively low [24], and in 2012 this group demonstrated MWIR pBiBn detectors capable room temperature operation [38]. That same year DeCuir et al reported a type II SLS pBiBn structure with 50% cutoff wavelength of 8.7 μm that demonstrated low dark current density of ~10 μA/cm 2 at −50 mV [39].…”

Section: Development Of Type II Sls Detectorsmentioning

confidence: 99%

“…These states can act as generation or recombination sites, particularly in narrow bandgap materials. In most experimental investigations performed the SRH GR current remained the major dark current component, particularly at lower operating temperatures and smaller reverse biases [38]. One means to suppress GR current is by reducing the depletion region width.…”

Section: Shockley-read-hall (Srh) Generation-recombination (Gr) Currentmentioning

confidence: 99%

“…TAT current becomes the dominate current mechanism under higher electrical fields with larger values of reverse bias [38]. It occurs at or near the depletion region, where minority carriers enter a trap state from the valence band and then tunnel into the conduction band.…”

Section: Trap-assisted Tunneling (Tat)mentioning

confidence: 99%

“…These states cause pinning of the surface Fermi level near the mid-gap, consequently enhancing the surface leakage current [77]. Passivation, which for this purpose usually involves deposition of a relatively thick layer of dielectric material (usually SiO 2 ), reduces the number of surface states and is thus critical for minimizing surface leakage currents, especially in low bandgap materials [38,78]. In SLS detectors, and in particular nBn structures, the placement and position of the barrier(s) can serve as a means to effectively reduce the surface leakage current [8].…”

Section: Surface Leakage Currentmentioning

confidence: 99%

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Design and Development of Two-Dimensional Strained Layer Superlattice (SLS) Detector Arrays for IR Applications

Sood¹,

Zeller²,

Welser³

et al. 2018

Two-Dimensional Materials for Photodetector

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The implementation of strained layer superlattices (SLS) for detection of infrared (IR) radiation has enabled compact, high performance IR detectors and two-dimensional focal plane arrays (FPAs). Since initially proposed three decades ago, SLS detectors exploiting type II band structures existing in the InAs/GaSb material system have become integral components in high resolution thermal detection and imaging systems. The extensive technological progress occurring in this area is attributed in part to the band structure flexibility offered by the nearly lattice-matched InAs/AlSb/Ga(In)Sb material system, enabling the operating IR wavelength range to be tailored through adjustment of the constituent strained layer compositions and/or thicknesses. This has led to the development of many advanced type II SLS device concepts and architectures for low-noise detectors and FPAs operating from the short-wavelength infrared (SWIR) to very long-wavelength infrared (VLWIR) bands. These include double heterostructures and unipolar-barrier structures such as graded-gap M-, W-, and N-structures, nBn, pMp, and pBn detectors, and complementary barrier infrared detector (CBIRD) and pBiBn designs. These diverse type II SLS detector architectures have provided researchers with expanded capabilities to optimize detector and FPA performance to further benefit a broad range of electrooptical/IR applications.

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Section: Development Of Type II Sls Detectorsmentioning

confidence: 99%

Section: Shockley-read-hall (Srh) Generation-recombination (Gr) Currentmentioning

confidence: 99%

Section: Trap-assisted Tunneling (Tat)mentioning

confidence: 99%

Section: Surface Leakage Currentmentioning

confidence: 99%

See 2 more Smart Citations

Design and Development of Two-Dimensional Strained Layer Superlattice (SLS) Detector Arrays for IR Applications

Sood¹,

Zeller²,

Welser³

et al. 2018

Two-Dimensional Materials for Photodetector

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show abstract

“…Focal plane arrays (FPAs) with high operating temperatures of up to 170 K have also been demonstrated 4 . T2SLs are advantageous because their band-gap energy can be tailored to achieve cutoff wavelengths of up to 28 µm by varying the thickness of the InAs/GaSb layers 5 . In this paper, we report the optimised fabrication and characterisation of T2SL single-pixel detectors as well as the successful realisation of an FPA.…”

Section: Introductionmentioning

confidence: 99%

Demonstration of Fabricated Midwave Infrared InAs/GaSb Type-II Superlattice-based Focal Plane Arrays

2017

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In this study, fabricated 320 × 256 infrared focal plane arrays (FPAs) were realised using a GaSb/InAs-based type-II superlattice heterostructure for midwave infrared (MWIR) imaging. We report here the optimised fabrication and characterisation of single-pixel infrared detectors and FPAs. MWIR spectral response up to 5 µm of these single-pixel detectors was evident up to 250 K. Responsivity was measured to be 1.62 A/W at 0.8 V and 80 K. Current-voltage characteristics at room temperature (300 K) and at low temperature (18 K) revealed the resistance and dark current variation of the device in the operating bias region. Moreover, good thermal images were obtained at device temperatures up to 150 K for low-temperature targets. Low noise equivalent difference in temperature was measured to be 58 mK at 50 K and 117 mK at 120 K.

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Mid-wavelength InAs/GaSb type-II superlattice barrier detector with nBn design and M barrier

Liu,

Zhu,

et al. 2023

Optoelectron. Lett.

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Band engineered HOT midwave infrared detectors based on type-II InAs/GaSb strained layer superlattices

Cited by 23 publications

References 22 publications

Design and Development of Two-Dimensional Strained Layer Superlattice (SLS) Detector Arrays for IR Applications

Design and Development of Two-Dimensional Strained Layer Superlattice (SLS) Detector Arrays for IR Applications

Demonstration of Fabricated Midwave Infrared InAs/GaSb Type-II Superlattice-based Focal Plane Arrays

Mid-wavelength InAs/GaSb type-II superlattice barrier detector with nBn design and M barrier

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