1984
DOI: 10.1103/physrevlett.53.2173
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Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect

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Cited by 1,679 publications
(785 citation statements)
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“…A quadratic shift was also observed in the quantum confined Stark effect [4,25]. The best fit for all 13 tubes studied here is achieved with κ b = 3.4.…”
supporting
confidence: 51%
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“…A quadratic shift was also observed in the quantum confined Stark effect [4,25]. The best fit for all 13 tubes studied here is achieved with κ b = 3.4.…”
supporting
confidence: 51%
“…Almost fifty years ago Franz and Keldysh predicted that a static electric field would modify the linear optical properties of the 3D semiconductors near their absorption edge [2, 3]. They showed that the absorption coefficient decays exponentially for photons below the bandgap and shows oscillations for energies above the bandgap.The interest in electroabsorption was revived about three decades latter after discovery of the Quantum-Confined Stark Effect in 2D quantum well structures [4,5]. Large Stark shifts were observed in fields directed perpendicular to the 2D planes.…”
mentioning
confidence: 99%
“…For semiconductors and their heterostructures, the optical field causes decrease of the bandgap between the valence and conduction band known as Franz-Keldysh effect 14,15 and quantum-confined Stark effect 16,17 , respectively. For conjugated molecules, which are organic semiconductors, it has been predicted that the Stark effect decreases the gap between the occupied and unoccupied molecular orbits leading to absorption of the initially non-resonant pulses and electrical currents due to the ω − 2ω interference 18 .…”
Section: Introductionmentioning
confidence: 99%
“…Meanwhile, the EQE of longer-wavelength LEDs (green, yellow, red) is still relatively lower than for blue devices. For longer-wavelength LEDs with high indium content, the internal quantum efficiency (IQE) is mainly limited by the large spontaneous polarization and piezoelectric polarization induced by the large compressive strain in MQWs, leading to the spatial separation of electrons and holes, known as the quantum confined Stark effect (QCSE) [6][7][8][9][10]. Thus, increasing the indium incorporation into InGaN growth will increase the internal strain, which results in a lower IQE and more severe QCSE.…”
Section: Introductionmentioning
confidence: 99%