Band edge discontinuities and carrier transport inc-Si/porous silicon heterojunctions

Abstract

We have prepared light emitting nanocrystalline porous silicon (PS) layers by electrochemical anodization of crystalline silicon (c-Si) wafer and characterized the c-Si/PS heterojunctions using temperature dependence of dark current-voltage (I-V) characteristics. The reverse bias I-V characteristics of c-Si/PS heterojunctions are found to behave like Schottky junctions where carrier transport is mainly governed by the carrier generation-recombination in the depletion region formed on the PS side. Fermi level of c-Si gets pinned to the defect levels at the interface resulting in ln(I)∝ V 1/2 . The barrier height in the reverse bias condition is shown to be equal to the band offset at the conduction band edges. An energy band diagram for the c-Si/PS heterojunction is proposed.

Non-oxidized porous silicon-based power AC switch peripheries

“…Note that Islam et al [ 20 ] proposed another band diagram to describe the band structure of the PS/Si(P) interface. They considered it as a heterojunction.…”

Investigation of Fluorescence Dynamics of BODIPY Embedded in Porous Silicon and Monitoring Formation of a SiO2 Layer via a Confocal FLIM-Based NSET Method

“…The Fermi energy level of porous silicon, which is prepared by electrochemical anodization of a p-type silicon wafer, is measured as 1.33 eV. 19,20 Therefore, Fermi angular frequency and Fermi wave vector values are calculated as 2.30 Â 10 15 s À1 and 5.94 Â 10 9 m À1 , respectively. The NSET characteristic distance d 0 is calculated as 12.9 Â 10 À9 m via eq 2.…”

The analysis of the charge transport mechanism of n-Si/MEH-PPV device structure using forward bias I–V–T characteristics

“…High ideality factor values may stem from fabricationinduced defects at the interface and recombination centers or interface states due to interface doping or specific interface structure. Also crystal lattice mismatch and interface states in equilibrium with the semiconductor in the n-Si/MEH-PPV device may lead to the ideality factor value being significantly greater than unity [18][19][20][21][22].…”