Band discontinuity measurements of the wafer bonded InGaAs∕Si heterojunction

McKay, Kyle S.; Lu, Felix; Kim, Jungsang; Yi, Chang-Keun; Brown, April S.; Hawkins, Aaron R.

doi:10.1063/1.2745254

Cited by 11 publications

(15 citation statements)

References 10 publications

(2 reference statements)

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“…6. I-V measurements of fusion-bonded devices exhibit behavior consistent with the samples that were fusion bonded at atmosphere (see McKay et al 28 ). As the interface chemistry of the initial UHV bonded InGaAs/Si heterojunction is nominally the same as the samples bonded in the glove box FIG.…”

Section: Initial Bonding Resultssupporting

confidence: 60%

“…Typical yields for the InGaAs/Si bonding process for our UHV system are ∼80% (as measured by the percentage of squares transferred) when bonded using our standard process. environment, the band alignment of the heterojunction should be similar to that reported in McKay et al 28 Prior to bonding, the Si and InGaAs samples are dipped in HF to remove any surface oxides, and the resulting Si surface is passivated mostly by H with some F. Hydrogen has a higher electronegativity compared to Si, so a dipole should form between the Si and H with electrons being transferred to H. This dipole affects the band alignment of the InGaAs/Si interface. Perfetti et al showed that the impact of H at the Si/SiO 2 interface was a shift in the band alignment of 0.5 eV compared to a H-free interface.…”

Section: Initial Bonding Resultssupporting

confidence: 59%

“…The fusion-bonding capabilities were tested by employing our standard InGaAs/Si bonding-preparation process (described in McKay et al 28 ). The samples were mounted onto their respective pucks, and loaded one at a time into the load lock to reach a pressure of less than 10 −5 mbar within 10 min of the HF dip.…”

Section: Initial Bonding Resultsmentioning

confidence: 99%

“…The InP substrate can be removed in a hydrochloric acid (HCl) selective etch and the InGaAs layers remain bonded to the Si substrate. The details of our standard InGaAs/Si fusionbonding process are described in McKay et al 28 …”

Section: Wafer-fusion-bonding Processmentioning

confidence: 99%

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A ultra-high-vacuum wafer-fusion-bonding system

McKay

Wolter

Kim

2012

Review of Scientific Instruments

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The design of heterojunction devices is typically limited by material integration constraints and the energy band alignment. Wafer bonding can be used to integrate material pairs that cannot be epitaxially grown together due to large lattice mismatch. Control of the energy band alignment can be provided by formation of interface dipoles through control of the surface chemistry. We have developed an ultra-high-vacuum system for wafer-fusion-bonding semiconductors with in situ control and measurement of surface properties relevant to interface dipoles. A wafer-fusion-bonding chamber with annealing capabilities was integrated into an ultra-high-vacuum system with a sputtering chamber and an x-ray photoelectron spectroscopy system for preparing and measuring the surface chemistry of wafers prior to bonding. The design of the system along with initial results for the fusion-bonded InGaAs/Si heterojunction is presented.

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Section: Initial Bonding Resultssupporting

confidence: 60%

Section: Initial Bonding Resultssupporting

confidence: 59%

Section: Initial Bonding Resultsmentioning

confidence: 99%

Section: Wafer-fusion-bonding Processmentioning

confidence: 99%

See 2 more Smart Citations

A ultra-high-vacuum wafer-fusion-bonding system

McKay

Wolter

Kim

2012

Review of Scientific Instruments

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“…A profound history of such a contact can be found in review of Gösele et al [84]. Thorough processing of conjoint surfaces, including their planarisation, minimisation of roughness value and thorough cleaning to remove any organic and metallic contaminations from the wafer surface [85][86][87] are necessary for direct bonding of two surfaces. The other bonding type is using high-temperature ''sticking'' of one solid body to the other by applying glasslike coating on both surfaces being bonded with further compression at the temperature of glass softening.…”

Section: Non-epitaxial Iii-v-on-si Techniques (Bonding)mentioning

confidence: 99%

III-V Compounds-on-Si: Heterostructure Fabrication, Application and Prospects

Bolkhovityanov¹,

Pchelyakov²

2009

TONANOJ

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While silicon and gallium arsenide are dominant materials in modern micro-and nanoelectronics, devices fabricated from them still use Si and GaAs substrates only separately. Integrating these materials on the large and cheep Si substrate has been the subject of enormous research efforts for the past three decades. This review attempts to systematize and generalize the current understanding of the fundamental physical mechanisms governing the epitaxial growth of GaAs and related III-V compounds on Si substrates. Different kinds of bonding as a very promising non-epitaxial method for III-V thin film integration on Si substrate are reviewed. Basic techniques available for improving the quality of such heterostructures are described, and recent advances in fabricating of device-quality III-V-on-Si heterostructures and corresponding devices are also presented.

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Advances of Various Heterogeneous Structure Types in Molecular Junction Systems and Their Charge Transport Properties

Shin

Jeon

et al. 2022

Advanced Science

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Molecular electronics that can produce functional electronic circuits using a single molecule or molecular ensemble remains an attractive research field because it not only represents an essential step toward realizing ultimate electronic device scaling but may also expand our understanding of the intrinsic quantum transports at the molecular level. Recently, in order to overcome the difficulties inherent in the conventional approach to studying molecular electronics and developing functional device applications, this field has attempted to diversify the electrical characteristics and device architectures using various types of heterogeneous structures in molecular junctions. This review summarizes recent efforts devoted to functional devices with molecular heterostructures. Diverse molecules and materials can be combined and incorporated in such two-and three-terminal heterojunction structures, to achieve desirable electronic functionalities. The heterojunction structures, charge transport mechanisms, and possible strategies for implementing electronic functions using various hetero unit materials are presented sequentially. In addition, the applicability and merits of molecular heterojunction structures, as well as the anticipated challenges associated with their implementation in device applications are discussed and summarized. This review will contribute to a deeper understanding of charge transport through molecular heterojunction, and it may pave the way toward desirable electronic functionalities in molecular electronics applications.

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Band discontinuity measurements of the wafer bonded InGaAs∕Si heterojunction

Cited by 11 publications

References 10 publications

A ultra-high-vacuum wafer-fusion-bonding system

A ultra-high-vacuum wafer-fusion-bonding system

III-V Compounds-on-Si: Heterostructure Fabrication, Application and Prospects

Advances of Various Heterogeneous Structure Types in Molecular Junction Systems and Their Charge Transport Properties

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